The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-12-15

著者

• YAMAGUCHI Yasuo

  Institute for Materials Research, Tohoku University

• Yamaguchi Y

  Tohoku Univ. Sendai

• Yamaguchi Y

  Kumamoto Techno Res. Park Kumamoto Jpn

• IWAMATSU Toshiaki

  ULSI Laboratory, Mitsubishi Electric Corporation

• YAMAGUCHI Yasuo

  ULSI Laboratory, Mitsubishi Electric Corporation

• MAEGAWA Shigeto

  ULSI Laboratory, Mitsubishi Electric Corporation

• NISHIMURA Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• IPPOSHI Takashi

  ULSI Development Center, Mitsubishi Electric Corporation

• IMAI Yukari

  ULSI Laboratory, Mitsubishi Electric Corporation

• TSUBOUCHI Natsuro

  ULSI Laboratory, Mitsubishi Electric Corporation

• IWAMATSU Toshiaki

  Advanced Device Development Dept., Renesas Technology Corp.

• IPPOSHI Takashi

  Advanced Device Development Dept., Renesas Technology Corp.

• Imai Y

  National Inst. Materials And Chemical Res. Ibaraki Jpn

• Maegawa Shigeto

  Advanced Device Development Dept. Renesas Technology Corp.

• Yamaguchi Y

  Central Workshop Osaka University

• Imai Yukari

  Ulsi Laboratory Mitsubishi Electric Corporation

• Maegawa Shigeto

  Ulsi Development Center Mitsubishi Electric Corporation

• Ipposhi Takashi

  Advanced Device Development Dept. Renesas Technology Corp.

• Nishimura Tadashi

  The Ulsi Development Center Mitsubishi Electric Corporation

• Nishimura Tadashi

  Ulsi Research And Development Center Mitsubishi Electric Corporation

• Iwamatsu Toshiaki

  Advanced Device Development Dept. Renesas Technology Corp.

• Tsubouchi Natsuro

  Lsi Research And Development Laboratory Mitusbishi Electric Corporation

• Tsubouchi Natsuro

  Ulsi Development Center Mitsubishi Electric Corporation

• Ipposhi T

  Advanced Device Development Dept. Renesas Technology Corp.

• Tsubouchi N

  Ulsi Dev. Center Hyogo Jpn

• Nishimura Tadashi

  Ulsi Development Center Mitsubishi Electric Corporation

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