High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-30

著者

• NISHIMURA Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• INOUE Yasuo

  ULSI Development Center, Mitsubishi Electric Corporation

• Inoue Y

  National Defense Acad. Yokosuka Jpn

• KUROI Takashi

  ULSI Development Center, Mitsubishi Electric Corporation

• TERAMOTO Akinobu

  ULSI Development Center, Mitsubishi Electric Corporation

• SAYAMA Hirokazu

  ULSI Laboratory, Mitsubishi Electric Corporation

• FURUKAWA Akihiko

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Nishida Yukio

  Ulsi Development Center Mitsubishi Electric Corporation

• Nishida Yukio

  Ulsi Laboratory Mitsubishi Electric Corporation

• SHIMIZU Satoshi

  ULSI Laboratory, Mitsubishi Electric Corporation

• UCHIDA Tetsuya

  ULSI Laboratory, Mitsubishi Electric Corporation

• Teramoto Akinobu

  Ulsi Development Center Mitsubishi Electric Corporation

• Teramoto Akinobu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Teramoto Akinobu

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Nishimura Tadashi

  The Ulsi Development Center Mitsubishi Electric Corporation

• Nishimura Tadashi

  Ulsi Research And Development Center Mitsubishi Electric Corporation

• Nishimura T

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• IZUMI Yoshitaka

  NHK Science and Technical Research Laboratories

• Inoue Y

  Ntt Access Network Service Systems Laboratories Ntt Corporation

• Kuroi T

  Ulsi Development Center Mitsubishi Electric Corporation

• Kuroi Takashi

  Ulsi Development Center Mitsubishi Electric Corporation

• Sayama Hirokazu

  Ulsi Development Center Mitsubishi Electric Corporation

• Sayama Hirokazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Iwai Yuki

  Dep. Of Electronics And Bioinformatics Sci. And Technol. Meiji Univ.

• Shimizu Satoshi

  Graduate School Tokyo Institute Of Technology

• Uchida T

  Department Of Molecular Biotechnology Graduate School Of Advanced Sciences Of Matter Hiroshima Unive

• Uchida T

  Semiconductor Leading Edge Technol. Inc. Yokohama Jpn

• Uchida Tetsuya

  Ulsi Development Center Mitsubishi Electric Corporation

• Furukawa Akihiko

  Advanced Technology R & D Center Mitsubishi Electric Corporation

• Furukawa Akihiko

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Inoue Yasuo

  Ulsi Development Center Mitsubishi Electric Corporation

• Shimizu Satoshi

  Ulsi Laboratory Mitsubishi Electric Corporation

• Nishimura Tadashi

  Ulsi Development Center Mitsubishi Electric Corporation

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