An Electrostatic-Discharge (ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Later-Extended Transistor (DET) for RF CMOS ICs
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Sugahara Kazuyuki
Advanced Technology R&d Center Mitsubishi Electric Corporation
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OHNAKADO Takahiro
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YAMAKAWA Satoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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FURUKAWA Akihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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NISHIKAWA Kazuyasu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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MURAKAMI Takaaki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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HASHIZUME Yasushi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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TOMISAWA Jun
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SUEMATSU Noriharu
Infprmation Technology R&D Center, Mitsubishi Electric Corporation
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OOMORI Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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