Design and Experimental Results of CMOS Low-Noise/Driver MMIC Amplifiers for Use in 2.4-GHz and 5.2-GHz Wireless Communications
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概要
- 論文の詳細を見る
This paper describes two kinds of on-chip matched low-noise/driver MMIC amplifiers (LN/D-As) suitable for 2.4-GHz and 5.2-GHz short-range wireless applications. The ICs are fabricated in a 0.18 μm bulk CMOS which has no extra processing steps for enhancing the RF performance. The successful use of the current-reuse topology and interdigitated capacitors (IDCs) enables sufficiently lownoise and high output power operations with low current dissipation despite the chip fabrication in the bulk CMOS leading to large RE substrate and conductor losses. The main measurement results of the two LN/D-As are as follows: a 3.8-dB noise figure (NF) and a 10.1-dB gain under the conditions of 1.8 V and 6 mA, a 3.4-dBm 1-dB gain compressed output power (P_<1db>) for a 2.4-V voltage supply and a 13-mA operating current for the 2.4-GHz LN/D-A, and a 4.9-dB NF and an 11.1-dB gain with a 1.8 V and 10 mA supply condition, a 2.3-dBm P_<1db> at 2.4 V and 16 mA for the 5.2-GHz LN/D-A. Both MMICs are suited for low-noise amplifiers and driver amplifiers in 2.4-GHz and 5.2-GHz low-cost, low-power wireless systems such as Bluetooth and hiperLAN.
- 社団法人電子情報通信学会の論文
- 2002-02-01
著者
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Sato Hiromi
Riken
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KOMURASAKI Hiroshi
System LSI Division, Mitsubishi Electric Corporation
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SATO Hisayasu
System LSI Development Center, Mitsubishi Electric Corporation
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YAMAMOTO Kazuya
System LSI Development Center, Mitsubishi Electric Corporation
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Sato H
Riken
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Saito H
Information Technology R Amp D Center Mitsubishi Electric Corporation
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Yamamoto Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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FURUKAWA Akihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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HASHIZUME Yasushi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Yamamoto K
Renesas Technology Corp.
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ONO Masayoshi
Information Technology R&D Center, Mitsubishi Electric Corporation
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Ono Masayoshi
Information Technology R&d Center Mitsubishi Electric Corporation
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Kato Naoyuki
System Lsi Development Center Mitsubishi Electric Corporation
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Komurasaki Hiroshi
System Lsi Division Mitsubishi Electric Corporation
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HEIMA Tetsuya
System LSI Development Center
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Heima Tetsuya
System Lsi Development Center Mitsubishi Electric Corporation
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Shibata H
System Lsi Development Center Mitsubishi Electric Corporation
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Furukawa Akihiko
Advanced Technology R & D Center Mitsubishi Electric Corporation
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Hashizume Yasushi
Advanced Technology R&d Center
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