A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0.5μm GaAs MESFETs

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概要

• 論文の詳細を見る

• A new broadband buffer circuit technique and its analytical design method are proposed for a high-speed decision circuit featuring both a higher input sensitivity and a larger phase margin. The buffer circuit characteristics are significantly improved by employing a series peaking source follower (SPSF), where a peaking inductor is inserted between the first and second source follower stages. Optimization of the peaking inductance successfully enhances the 3-dB bandwidth of the data-input buffer and the clock buffer by 7GHz for both, over conventional double-stage source follower SCFL buffers. The proposed circuit technique and design method are applied to a 10-Gbit/s decision circuit by the use of production-level 0.5μm GaAs MESFETs. The fabricated decision circuit achieves a data input sensitivity of 43 m_<p-p> and a phase margin of 240° both at 10-Gbit/s: a 230 mV_<p-p> smaller input sensitivity and a 35° larger phase margin than those of conventional non-peaking inductor types.

• 社団法人電子情報通信学会の論文
• 1998-10-25

著者

• Yamamoto Kazuya

  System Lsi Development Center Mitsubishi Electric Corporation

• Yamamoto K

  Renesas Technology Corp.

• Omura E

  Mitsubishi Electric Corp. Hyogo Jpn

• MIYASHITA Miyo

  the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation

• ANDOH Naoto

  the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation

• YAMAMOTO Kazuya

  the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation

• NAKAGAWA Junichi

  the Information Techonology Research and Development Center, Mitsubishi Electric Corporation

• OMURA Etsuji

  the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation

• AIGA Masao

  the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation

• NAKAYAMA Yoshikazu

  the Department of Physics and Electronics, Osaka Prefecture University

• Nakayama Y

  Osaka Prefecture Univ. Sakai‐shi Jpn

• Miyashita M

  Central Res. Inst. Of Electric Power Ind. Komae‐shi Jpn

• Andoh Naoto

  The High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation

• Aiga Masao

  The High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation

• Nakayama Yoshikazu

  The Department Of Physics And Electronics Osaka Prefecture University

• Nakagawa Junichi

  The Information Techonology Research And Development Center Mitsubishi Electric Corporation

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