Yamamoto K | Renesas Technology Corp.
スポンサーリンク
概要
関連著者
-
Yamamoto Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
-
Yamamoto K
Renesas Technology Corp.
-
Sato Hiromi
Riken
-
KOMURASAKI Hiroshi
System LSI Division, Mitsubishi Electric Corporation
-
SATO Hisayasu
System LSI Development Center, Mitsubishi Electric Corporation
-
YAMAMOTO Kazuya
System LSI Development Center, Mitsubishi Electric Corporation
-
Sato H
Riken
-
Saito H
Information Technology R Amp D Center Mitsubishi Electric Corporation
-
Komurasaki Hiroshi
System Lsi Division Mitsubishi Electric Corporation
-
Shibata H
System Lsi Development Center Mitsubishi Electric Corporation
-
大島 俊
株式会社日立製作所 中央研究所
-
MIKI Takahiro
System LSI Division, Mitsubishi Electric Corporation
-
YAMAMOTO Katsumi
Renesas Technologies Co.
-
EZUMI Yoshiyuki
Renesas Technologies Co.
-
TAKAYASU Kunio
Renesas Technologies Co.
-
AIZAWA Shinya
Renesas Technologies Co.
-
Kokubo M
Communication Device Research Department Central Research Laboratory Hitachi Ltd.
-
FURUKAWA Akihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
Kokubo Masaru
Communication Device Research Department Central Research Laboratory Hitachi Ltd.
-
Kato Naoyuki
System Lsi Development Center Mitsubishi Electric Corporation
-
Miki Takahiro
System Lsi Division Mitsubishi Electric Corporation
-
Miki T
Faculty Of Education Gunma University
-
Aizawa Shinya
Renesas Technology Corp.
-
Takayasu Kunio
Renesas Technology Corp.
-
HEIMA Tetsuya
System LSI Development Center
-
Heima Tetsuya
System Lsi Development Center Mitsubishi Electric Corporation
-
Ezumi Yoshiyuki
Renesas Technology Corp.
-
Furukawa Akihiko
Advanced Technology R & D Center Mitsubishi Electric Corporation
-
KOKUBO Masaru
Hitachi, Ltd.
-
HYOGO Akira
Faculty of Science and Technology, Tokyo University of Science
-
SEKINE Keitaro
Faculty of Science and Technology, Tokyo University of Science
-
YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
-
Yamaguchi Y
Tohoku Univ. Sendai
-
Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
-
YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
-
UEDA Kimio
System LSI Development Center, Mitsubishi Electric Corporation
-
MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
-
SASAKI Nagisa
System LSI Division, Mitsubishi Electric Corporation
-
HORIBA Yasutaka
Semiconductor Group, Mitsubishi Electric Corporation
-
Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
-
SHIDA Masaaki
Hitachi Ltd.
-
OSHIMA Takashi
Hitachi Ltd.
-
SHIBAHARA Yoshiyuki
Hitachi Ltd.
-
MATSUURA Tatsuji
Renesas Technologies Co.
-
KAWAI Kazuhiko
Renesas Technologies Co.
-
ENDO Takefumi
Renesas Technologies Co.
-
OSAKI Katsumi
Renesas Technologies Co.
-
SONODA Hiroki
Renesas Technologies Co.
-
MATSUOKA Masaharu
Renesas Technologies Co.
-
KOBAYASHI Takao
Renesas Technologies Co.
-
HEMMI Takaaki
Renesas Technologies Co.
-
KUDOH Junya
Renesas Technologies Co.
-
MIYAGAWA Hirokazu
Renesas Technologies Co.
-
UTSUNOMIYA Hiroto
Renesas Technologies Co.
-
SUZUKI Jun
Renesas Technologies Co.
-
MOTOKI Mikihiko
Renesas Technologies Co.
-
ABE Yoshiyuki
Renesas Technologies Co.
-
KUROSAWA Takao
Renesas Technologies Co.
-
OOKAWARA Satoru
Renesas Technologies Co.
-
KOKUBO Masaru
Communication Device Research Department, Central Research Laboratory, Hitachi Ltd.
-
OSHIMA Takashi
Communication Device Research Department, Central Research Laboratory, Hitachi Ltd.
-
Ueda K
Mitsubishi Electric Corp. Itami‐shi Jpn
-
Ueda Kimio
System Lsi Development Center Mitsubishi Electric Corp.
-
Hyogo Akira
Faculty Of Science And Technology Science University Of Tokyo
-
Sekine Keitaro
Faculty Of Science And Technology Okyo University Of Science
-
Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
-
HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
-
Yamaguchi Y
Central Workshop Osaka University
-
Kokubo Masaru
Hitachi Ltd.
-
Ueda K
System Lsi Laboratory Mitsubishi Electric Corporation
-
HASHIZUME Yasushi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
-
Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
-
Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
-
Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
-
ONO Masayoshi
Information Technology R&D Center, Mitsubishi Electric Corporation
-
Ono Masayoshi
Information Technology R&d Center Mitsubishi Electric Corporation
-
Ueda K
Ntt Atsugi‐shi Jpn
-
Omura E
Mitsubishi Electric Corp. Hyogo Jpn
-
Sasaki Nagisa
System Lsi Division Mitsubishi Electric Corporation
-
Ueda Katsuhiko
Department Of Information Engineering Nara National College Of Technology
-
Wakada Hideyuki
System Lsi Development Center Mitsubishi Electric Corporation
-
MIYASHITA Miyo
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
-
ANDOH Naoto
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
-
YAMAMOTO Kazuya
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
-
NAKAGAWA Junichi
the Information Techonology Research and Development Center, Mitsubishi Electric Corporation
-
OMURA Etsuji
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
-
AIGA Masao
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
-
NAKAYAMA Yoshikazu
the Department of Physics and Electronics, Osaka Prefecture University
-
Nakayama Y
Osaka Prefecture Univ. Sakai‐shi Jpn
-
Miyashita M
Central Res. Inst. Of Electric Power Ind. Komae‐shi Jpn
-
Andoh Naoto
The High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
-
Aiga Masao
The High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
-
Nakayama Yoshikazu
The Department Of Physics And Electronics Osaka Prefecture University
-
Hashizume Yasushi
Advanced Technology R&d Center
-
Matsuura Tatsuji
Renesas Electronics Corp.
-
Nakagawa Junichi
The Information Techonology Research And Development Center Mitsubishi Electric Corporation
著作論文
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A GFSK Transmitter Architecture for a Bluetooth RF-IC, Featuring a Variable-Loop-Bandwidth Phase-Locked Loop Modulator(Microwaves, Millimeter-Waves)
- A Small-Chip-Area Transceiver IC for Bluetooth Featuring a Digital Channel-Selection Filter(Analog Circuit and Device Technologies)
- Design and Experimental Results of CMOS Low-Noise/Driver MMIC Amplifiers for Use in 2.4-GHz and 5.2-GHz Wireless Communications
- 2.4-GHz-Band CMOS RF Front-End Building Blocks at a 1.8-V Supply(Special Section on Analog Circuit Techniques and Related Topics)
- A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0.5μm GaAs MESFETs