Omura E | Mitsubishi Electric Corp. Hyogo Jpn
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概要
関連著者
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Omura E
Mitsubishi Electric Corp. Hyogo Jpn
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GOTO Kenya
Department of Information and Communication Technology Tokai University
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Goto K
Department Of Information And Communication Technology Tokai University
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Mihashi Yutaka
Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Mihashi Y
Mitsubishi Electric Corp. Hyogo Jpn
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GOTO Katsuhiko
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corp.
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OMURA Etsuji
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corp.
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Shimura T
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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KIMURA Tatsuya
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
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Yamamoto Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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Shimura Tamaki
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Yamamoto K
Renesas Technology Corp.
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Takiguchi Toru
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corp.
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Kimura Tatsuya
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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Kimura Tatsuya
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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SHIMURA Teruyuki
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
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MIYASHITA Miyo
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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ANDOH Naoto
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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YAMAMOTO Kazuya
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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NAKAGAWA Junichi
the Information Techonology Research and Development Center, Mitsubishi Electric Corporation
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OMURA Etsuji
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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AIGA Masao
the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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NAKAYAMA Yoshikazu
the Department of Physics and Electronics, Osaka Prefecture University
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Nakayama Y
Osaka Prefecture Univ. Sakai‐shi Jpn
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UESUGI Fumito
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corp.
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TAKAHASHI Shogo
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corp.
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ISHIMURA Eitaro
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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MIYASHITA Miyo
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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NISHIGUCHI Harumi
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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SHIBA Tetsuo
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Miyashita M
Central Res. Inst. Of Electric Power Ind. Komae‐shi Jpn
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Miyashita Miyo
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Shiba T
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Takahashi Shogo
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corp.
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Andoh Naoto
The High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Uesugi Fumito
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corp.
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Aiga Masao
The High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Shiba Tetsuo
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Nishiguchi Harumi
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Nakayama Yoshikazu
The Department Of Physics And Electronics Osaka Prefecture University
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Ishimura Eitaro
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Nakagawa Junichi
The Information Techonology Research And Development Center Mitsubishi Electric Corporation
著作論文
- A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0.5μm GaAs MESFETs
- Zn-Diffusion-Induced Disordering of InGaAs/AlGaInAs Multiple Quantum Well and Its Application to Long-Wavelength Laser
- Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy