Ueda K | System Lsi Laboratory Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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Ueda K
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ueda Kimio
System Lsi Development Center Mitsubishi Electric Corp.
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Ueda K
System Lsi Laboratory Mitsubishi Electric Corporation
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Ueda K
Ntt Atsugi‐shi Jpn
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Ueda Katsuhiko
Department Of Information Engineering Nara National College Of Technology
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Mashiko Koichiro
The Ulsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Laboratory Mitsubishi Electric Corporation
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UEDA Kimio
System LSI Development Center, Mitsubishi Electric Corporation
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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MASHIKO Koichiro
System LSI Development Center, Mitsubishi Electric Corporation
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Yamaguchi Y
Central Workshop Osaka University
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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SATO Hisayasu
System LSI Development Center, Mitsubishi Electric Corporation
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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SASAKI Nagisa
System LSI Division, Mitsubishi Electric Corporation
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Sato H
Riken
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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Wada Yoshiki
System Lsi Development Center Mitsubishi Electric Corp.
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Wada Y
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Saito H
Information Technology R Amp D Center Mitsubishi Electric Corporation
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Sasaki Nagisa
System Lsi Division Mitsubishi Electric Corporation
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Ipposhi T
Advanced Device Development Dept. Renesas Technology Corp.
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Shibata H
System Lsi Development Center Mitsubishi Electric Corporation
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Ishida Toru
Materials And Components Research Laboratory Matsushita Electric Industrial Co. Ltd.
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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WADA Yoshiki
System LSI Development Center, Mitsubishi Electric Corporation
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IPPOSHI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Okamoto M
Nit Corp. Atsugi‐shi Jpn
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Ishikawa Tsutomu
Fujitsu Laboratories Lid.
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Ishikawa Toshihiro
The Telecom Research Lab. Matsushita Communication Ind. Co. Ltd.
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Ishida T
Osaka Prefecture Univ. Sakai‐shi Jpn
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HIROTA Takanori
the System LSI Division, Mitsubishi Electric Corp.
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MARUI Shinichi
the Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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SUGIMURA Toshio
the Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Ishikawa T
Microwave Device Development Department Mitsubishi Electric Corporation
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Marui Shinichi
The Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Sugimura Toshio
The Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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SHIBATA Hiroshi
Institute for Drug Discovery Research, Yamanouchi Pharmaceutical Co., Ltd.
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Sato Hiromi
Riken
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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YAMAGUCHI Yasuo
the ULSI Development Center, Mitsubishi Electric Corporation
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IPPOSHI Takashi
the ULSI Development Center, Mitsubishi Electric Corporation
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UEDA Kimio
the ULSI Development Center, Mitsubishi Electric Corporation
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MASHIKO Koichiro
the ULSI Development Center, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
the ULSI Development Center, Mitsubishi Electric Corporation
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INUISHI Masahide
the ULSI Development Center, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
the ULSI Development Center, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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KOMURASAKI Hiroshi
System LSI Division, Mitsubishi Electric Corporation
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YAMAMOTO Kazuya
System LSI Development Center, Mitsubishi Electric Corporation
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MIKI Takahiro
System LSI Division, Mitsubishi Electric Corporation
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HORIBA Yasutaka
Semiconductor Group, Mitsubishi Electric Corporation
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NII Koji
System LSI Development Center, Mitsubishi Electric Corporation
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HORIBA Yasutaka
System LSI Development Center, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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YASUOKA Akihiko
ULSI Laboratory, Mitsubishi Electric Corporation
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HIRAO Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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Nii Koji
Renesas Technology Corporation
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Nii K
Renesas Technol. Corp. Itami‐shi Jpn
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Inoue Y
National Defense Acad. Yokosuka Jpn
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KUBO Kazuo
Information Technology R amp D Center, Mitsubishi Electric Corporation
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Ueda Kimio
Lsi Laboratory Mitsubishi Electric Corporation
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Yamamoto Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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Yasuoka Akihiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Yamaguchi Yasuo
The Ulsi Development Center Mitsubishi Electric Corporation
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Yamamoto K
Renesas Technology Corp.
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KUBO Shunji
ULSI Laboratory, Mitsubishi Electrio Corp.
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YOSHOMURA Tsutomu
System LSI Development Center, Mitsubishi Electric Corp.
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TAKASOH Jun
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corp.
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WADA Yoshiki
LSI Laboratory, Mitsubishi Electric Corporation
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HIROTA Takanori
LSI Laboratory, Mitsubishi Electric Corporation
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MASHIKO Koichiro
LSI Laboratory, Mitsubishi Electric Corporation
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HAMANO Hisanori
LSI Laboratory, Mitsubishi Electric Corporation
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KABUO Hideyuki
the Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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OKAMOTO Minoru
the Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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TANAKA Isao
the Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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YASOSHIMA Hiroyuki
the Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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YAMASAKI Masayuki
the Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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UEDA Katsuhiko
the Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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SUZUKI Hidetoshi
the Telecom Research Lab., Matsushita Communication Ind. Co., Ltd.
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ASHI Ryuichi
the LSI Development Center, Matsushita Electronics Corp.
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Ueda Katsuhiko
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Sugimura Toshio
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Ishikawa Toshihiro
Telecom Research Laboratory, Matsushita Communication Ind. Co., Ltd.
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Okamoto Minoru
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Sakakihara Mikio
LSI Development Center, Matsushita Electronics Crop.
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Marui Shinichi
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Masahiko Koichiro
System LSI Laboratory, Mitsubishi Electric Corporation
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Kubo Kazuo
Information Technology R&d Center Mitsubishi Electric Corp.
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Inoue Y
Ntt Access Network Service Systems Laboratories Ntt Corporation
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Takasoh J
Mitsubishi Electric Corp. Itami‐shi Jpn
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Komurasaki Hiroshi
System Lsi Division Mitsubishi Electric Corporation
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Miki Takahiro
System Lsi Division Mitsubishi Electric Corporation
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Miki T
Faculty Of Education Gunma University
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Ueda Katsuhiko
Department Of Electronics And Information Technology Osaka Electro-communication University Junior C
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Ueda Katsuhiko
Depariment Of Information & Computer Engineering Nara National College Of Technology
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Kubo Shunji
Ulsi Laboratory Mitsubishi Electric Corporation
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Yamasaki Masayuki
The Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Ashi Ryuichi
The Lsi Development Center Matsushita Electronics Corp.
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Kabuo Hideyuki
The Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Hamano H
Mitsubishi Electric Corp. Itami‐shi Jpn
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Yasoshima Hiroyuki
The Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Yoshimura T
Mitsubishi Electric Corp. Itami‐shi Jpn
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Sakakihara Mikio
Lsi Development Center Matsushita Electronics Crop.
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Tanaka Isao
The Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Suzuki Hidetoshi
The Telecom Research Lab. Matsushita Communication Ind. Co. Ltd.
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Shibata Hiroshi
Institute Of Technology Mitsubishi Electric Corporation
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Shibata Hiroshi
Institute For Drug Discovery Research Yamanouchi Pharmaceutical Co. Ltd.:department Of Animal Scienc
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SHIBATA Hiroshi
Institute for Biomedical Research, Suntory Limited
著作論文
- Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Ultra Low Power Operation of Partially-Depleted SOI/CMOS Integrated Circuits (Special Issue on Low-power LSIs and Technologies)
- SOI/CMOS Circuit Design for High-Speed Communication LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
- An 80-MOPS-Peak High-Speed and Low-Power-Consumption 16-b Digital Signal Processor
- A 16-bit Digital Signal Processor with Specially Arranged Multiply-Accumulator for Low Power Consumption
- 3.0 Gb/s, 272 mW, 8:1 Multiplexer and 4.1 Gb/s, 388 mW, 1:8 Demultiplexer
- A New Emitter-Follower Circuit for High-Speed and Low-Power ECL
- Automatic Seal Imprint Verification System with Imprint Quality Assessment Function and Its Performance Evaluation