Ipposhi Takashi | Advanced Device Development Dept. Renesas Technology Corp.
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概要
関連著者
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Ipposhi T
Advanced Device Development Dept. Renesas Technology Corp.
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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IPPOSHI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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Kito Hijiri
Department Of Physics Aoyama-gakuin University
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Kudo Hiroshi
Institute Of Applied Physics University Of Tsukuba
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ISHIHARA Toyoyuki
Tandem Accelerator Center, University of Tsukuba
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Ishihara T
Hyogo Prefectural Institute Of Industrial Research(hpiir)
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Ishihara T
Hyogo Prefectural Institute Of Industrial Research
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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Inoue Y
National Defense Acad. Yokosuka Jpn
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Yamaguchi Y
Central Workshop Osaka University
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Kanda H
Univ. Tsukuba Ibaraki
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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HIRANO Yuuichi
Advanced Device Development Dept., Renesas Technology Corp.
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Inoue Y
Ntt Access Network Service Systems Laboratories Ntt Corporation
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Ipposhi Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Hirano Yuuichi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Iwamatsu Toshiaki
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Kito Hijiri
Faculty Of Science And Engineering Aoyama-gakuin University
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Takada Ken-ichi
Research Institute For Scientific Measurements Tohoku University
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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HIRAO Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
Advanced Device Development Dept., Renesas Technology Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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OHJI Yuzuru
Advanced Device Development Dept., Renesas Technology Corp.
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KURIYAMA Hirotada
ULSI Laboratory, Mitsubishi Electric Corporation
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Ueda K
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ueda Kimio
System Lsi Development Center Mitsubishi Electric Corp.
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TAKITA Koki
Institute of Materials Science, University of Tsukuba
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Ueda K
System Lsi Laboratory Mitsubishi Electric Corporation
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HIRANO Yoichi
National Institute of Advanced Industrial Science and Technology (AIST)
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Mashiko Koichiro
The Ulsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Laboratory Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Kuriyama Hiroyuki
Sanyo Electric Co. Ltd.:giant Electronics Technology Co. Ltd.
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Ueda K
Ntt Atsugi‐shi Jpn
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Seki S
Department Of Industrial Chemistry Graduate School Of Engineering Tokyo Institute Of Polytechnics
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Seki Seiji
Ulvac Japan Ltd.
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Takita K
Institute Of Materials Science University Of Tsukuba
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Takita K
Univ. Tsukuba Ibaraki Jpn
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Takita Koki
Institute For Materials Science University Of Tsukuba
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Ohji Yuzuru
Advanced Device Development Dept. Renesas Technology Corp.
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Hirano Y
Advanced Device Development Dept. Renesas Technology Corp.
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Ueda Katsuhiko
Department Of Information Engineering Nara National College Of Technology
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FUKUSHO Taro
Institute of Applied Physics, University of Tsukuba
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Fukusho Taro
Institute Of Applied Physics University Of Tsukuba
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Ohji Yuzuru
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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UEDA Kimio
System LSI Development Center, Mitsubishi Electric Corporation
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MASHIKO Koichiro
System LSI Development Center, Mitsubishi Electric Corporation
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YASUOKA Akihiko
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYOSHI Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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KOMATSU Futoshi
Renesas Semiconductor Engineering Corp.
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KOHNO Yoshio
ULSI Laboratory, Mitsubishi Electric Corporation
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Akinaga Hiroyuki
Institute Of Materials Science University Of Tsukuba
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Inoue T
Tohoku Univ. Sendai Jpn
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Asano Hajime
Institute Of Materials Science University Of Tsukuba
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Kohno Yoshio
Ulsi Laboratory Mitsubishi Electric Corporation
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Masuda K
Univ. Tsukuba Ibaraki
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Masuda Kohzoh
Institute Of Materials Science University Of Tsukuba Tsukuba Academic City
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Masuda Kohzoh
Institute Of Materials Science University Of Tsukuba
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Inoue Tatsuya
Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect
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Inoue Tetsushi
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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ISHIGAKI Toru
Institute of Material Science,University of Tsukuba
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Masuda K
Department Of Physics Faculty Of Science Yamagata University
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Yoshida E
Faculty Of Pharmaceutical Sciences Chiba University
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Yoshida Eiji
Ntt Access Network Systems Laboratories Optical Soliton Transmission Research Group
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Yoshida E
Institute Of Applied Physics University Of Tsukuba
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Inoue Takahito
Electrotechnical Laboratory
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Shima K
New Technology Research Laboratory Central Research Laboratories Sumitomo Osaka Cement Co. Ltd.
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SHIMA Kunihiro
Institute of Applied Physics, University of Tsukuba
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Asano Hajime
Instiiute Of Materials Science University Of Tsukuba
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Nishino Makoto
Institute Of Materials Science University Of Tsukuba
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KATOH Hideo
Institute of Materials Science, University of Tsukuba
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Yasuoka Akihiko
Ulsi Laboratory Mitsubishi Electric Corporation
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IKEDA Tatsuhiko
Advanced Device Development Dept., Renesas Technology Corp.
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YOSHIDA Eiji
Institute of Applied Physics, University of Tsukuba
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Miyoshi Hirokazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Murakami Kouichi
Institute Of Materials Science University Of Tsukuba
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INOUE Tomoyasu
Department of Electronic Engineering, Iwaki Meisei University
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Ishigaki T
Muroran Inst. Of Technol. Hokkaido
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Ishigaki T
Matsushita Research Inst. Tokyo Inc. Kawasaki
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Shima Kunihiro
Institute Of Applied Physics University Of Tsukuba
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Tanabe A
Institute Of Applied Physics University Of Tsukuba
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TANABE Atsushi
Institute of Applied Physics, University of Tsukuba
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Miyoshi Hirokazu
徳島大学医学部
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Tsubouchi N
Ulsi Dev. Center Hyogo Jpn
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Ikeda Tatsuhiko
Advanced Device Development Dept. Renesas Technology Corp.
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Tsujiuchi Mikio
Advanced Device Development Dept. Renesas Technology Corp.
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Tsujiuchi Mikio
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inuishi Masahide
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Satoh Minoru
Nagaoka University Of Technology
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YAMAMOTO Yasuhiro
Department of Chemistry, Faculty of Science, Toho University
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Yokoyama Y
Inst. For Materials Res. Tohoku Univ.
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YAMAGUCHI Yasuo
the ULSI Development Center, Mitsubishi Electric Corporation
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IPPOSHI Takashi
the ULSI Development Center, Mitsubishi Electric Corporation
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UEDA Kimio
the ULSI Development Center, Mitsubishi Electric Corporation
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MASHIKO Koichiro
the ULSI Development Center, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
the ULSI Development Center, Mitsubishi Electric Corporation
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INUISHI Masahide
the ULSI Development Center, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
the ULSI Development Center, Mitsubishi Electric Corporation
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NII Koji
System LSI Development Center, Mitsubishi Electric Corporation
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WADA Yoshiki
System LSI Development Center, Mitsubishi Electric Corporation
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HORIBA Yasutaka
System LSI Development Center, Mitsubishi Electric Corporation
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IMAI Yukari
ULSI Laboratory, Mitsubishi Electric Corporation
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TSUBOUCHI Natsuro
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYAMOTO Shoichi
ULSI Laboratory, Mitsubishi Electric Corporation
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Tusbouchi Natsuro
ULSI Laboratory, Mitsubishi Electric Corporation
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Satoh M
Tohoku Univ. Sendai Jpn
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TAKASHINO Hiroyuki
Advanced Device Development Dept., Renesas Technology Corp.
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Nii Koji
Renesas Technology Corporation
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Nii K
Renesas Technol. Corp. Itami‐shi Jpn
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Imai Y
National Inst. Materials And Chemical Res. Ibaraki Jpn
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Wada Yoshiki
System Lsi Development Center Mitsubishi Electric Corp.
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Inoue T
Advanced Discrete Semiconductor Technology Laboratory Corporated Research And Development Center Tos
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Wada Y
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Satoh Masaharu
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Yoshida Y
Department Of Energy Engineering And Science Nagoya University
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Yamada Y
Akita Univ. Akita Jpn
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Nagashima Y
Nagoya Inst. Technology Nagoya
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Imai Yukari
Ulsi Laboratory Mitsubishi Electric Corporation
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Satoh M
Department Of Physics Faculty Of Science Okayama University
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IPPOSHI Takashi
Institute of Materials Science, University of Tsukuba
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IMAI Mitsugu
Institute of Materials Science, University of Tsukuba
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Nagashima Yasuo
Tandem Accelerator Center University Of Tsukuba
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TSUJIUCHI Mikio
Advanced Device Development Dept., Renesas Technology Corp.
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CHEN Daniel
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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YOSHIMURA Tsutomu
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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Ipposhi Takashi
Institute Of Materials Science University Of Tsukuba
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Miyamoto Shouichi
Ulsi Laboratory Mitsubishi Electric Corporation
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Tsubouchi Natsuro
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
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Tsubouchi Natsuro
Ulsi Development Center Mitsubishi Electric Corporation
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Yamaguchi Yasuo
The Ulsi Development Center Mitsubishi Electric Corporation
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SATOH Masataka
Research Center of Ion Beam Technology, Hosei University
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Ohsuna Tetsu
Department Of Electronic Engineering Iwaki Meisei University
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Chen Daniel
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Imai Mitsugu
Institute Of Materials Science University Of Tsukuba
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Satoh Masataka
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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Miyoshi H
Mitsubishi Electric Corp.
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Maeagawa Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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Nishimura Hisayuki
Ryoden Semiconductor System Engineering Corporation
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Tanina Osamu
ULSI Laboratory, Mitsubishi Electric Corporation
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Tanina Osamu
Ulsi Laboratory Mitsubishi Electric Corporation
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Inoue T
Applied Laser Engineering Research Institute
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Uchida Tetsuya
Advanced Technology Research Department Semiconductor Leeding Edge Technologies Inc.
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Yoshimura Tsutomu
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Tusbouchi Natsuro
Ulsi Laboratory Mitsubishi Electric Corporation
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Oda Hidekazu
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ishikawa Kozo
Renesas Semiconductor Engineering, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Shinohara Hirofumi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Terada Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Maki Yukio
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Eikyu Katsumi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Obayashi Shigeki
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Nii Koji
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsukamoto Yasumasa
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yabuuchi Makoto
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inoue Yasuo
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yokoyama Yoshihiko
Superconductivity Research Laboratory, International Superconductivity Technology Center
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Uchida Tetsuya
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
著作論文
- Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
- Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
- Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond
- Magnetic Quantum Oscillations Due to Auger Recombination and Shockley-Read Recombination Processes in n-Hg_Cd_xTe
- X-Ray Diffraction Study on the Crystal Structure of Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- Crystal Structure of the High T_c Superconductor LnBa_2Cu_3O_ (Ln=Sm, Eu and Gd)
- Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology
- A 90nm-node SOI Technology for RF Applications
- Shadowing Pattern Imaging with High-Energy Secondary Electrons Induced by Fast Ions
- Planar Shadowing of Fast Ion Beams in Si and Ge Crystals Bombarded with 5 keV Ar^+
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
- Surface Layer Analysis of Sputter-Etched Si Using Secondary Electrons Induced by Fast Ions
- Determination of the Crystallographic Polarity of Zincblende Structure by Using Ion-Induced Secondary Electrons
- A 0.4 μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories
- A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology