Hirano Y | Advanced Device Development Dept. Renesas Technology Corp.
スポンサーリンク
概要
関連著者
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Hirano Y
Advanced Device Development Dept. Renesas Technology Corp.
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HIRANO Yoichi
National Institute of Advanced Industrial Science and Technology (AIST)
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Hirano Y
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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島田 敏宏
東京大学大学院理学系研究科
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Shimada T
National Institute Of Advanced Industrial Science And Technology (aist)
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Horino Y
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Yagi Y
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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HORINO Yuji
National Institute of Advanced Industrial Science and Technology
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Horino Yuji
National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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Koguchi H
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Koguchi Haruhisa
Department Of Physics Faculty Of Science Kanazawa University
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CHAYAHARA Akiyoshi
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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Chayahara Akiyoshi
Government Industrial Research Institute Osaka
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SHIMADA Toshio
Electrotechnical Laboratory
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CHAYAHARA Akiyoshi
Government Industrial Research Institute
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HORINO Yuji
Government Industrial Research Institute
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小口 治久
産総研
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Satoh Minoru
Nagaoka University Of Technology
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Satoh M
Tohoku Univ. Sendai Jpn
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KIUCHI Masato
Government Industrial Research Institute
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FUJII Kanenaga
Government Industrial Research Institute
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TSUBOUCHI Nobuteru
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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CHAYAHARA Akiyoshi
AIST Kansai
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Kiuchi M
National Inst. Advanced Industrial Sci. And Technol. Osaka Jpn
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Maejima Yoshiki
Electrotechnical Laboratory
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Yagi Yasuyuki
Electrotechnical Laboratory
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Sekine S
National Institute Of Advanced Industrial Science And Technology (aist)
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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KINOMURA Atsushi
Osaka National Research Institute, AIST
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HORINO Yuji
Osaka National Research Institute, AIST
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SATOU Mamoru
Government Industrial Research Institute
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Ogawa K
Electrotechnical Laboratory
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Heck Claire
National Institute Of Advanced Industrial Science And Technology Aist Kansai Laboratory Of Purified
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Satou Mamoru
Goverment Industrial Research Institute
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SAKAKITA Hajime
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology (AIST
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YAGI Yasuyuki
Energy Technology Division, Electrotechnical Laboratory, AIST, MITI
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HIRANO Yoichi
Energy Technology Division, Electrotechnical Laboratory, AIST, MITI
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KOGUCHI Haruhisa
Energy Technology Division, Electrotechnical Laboratory, AIST, MITI
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Sakakita Hajime
Energy Electronics Institute National Institute Of Advanced Industrial Science And Technology (aist)
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HIRANO Yoichi
Electrotechnical Laboratory
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ABIKO Kenji
Institute for Materials Research, Tohoku University
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HIRANO Yuuichi
Advanced Device Development Dept., Renesas Technology Corp.
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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MAEGAWA Shigeto
Advanced Device Development Dept., Renesas Technology Corp.
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OHJI Yuzuru
Advanced Device Development Dept., Renesas Technology Corp.
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MOKUNO Yoshiaki
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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TSUBOUCHI Nobuteru
Osaka National Research Institute
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CHAYAHARA Akiyoshi
Osaka National Research Institute
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HECK Claire
Osaka National Research Institute
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YAGI Yasuyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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KOGUCHI Haruhisa
National Institute of Advanced Industrial Science and Technology (AIST)
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SHIMADA Toshio
National Institute of Advanced Industrial Science and Technology (AIST)
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SAKAKITA Hajime
National Institute of Advanced Industrial Science and Technology (AIST)
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Ogawa Kiyoshi
Electrotechnical Laboratory
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Sekine S
Electrotechnical Laboratory
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Ohji Yuzuru
Advanced Device Development Dept. Renesas Technology Corp.
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Abiko Kenji
Institute For Materials Research Tohoku University
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Asai Tomohiko
College Of Science And Technology Nihon University
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KONDOH Yoshiomi
Department of Electronic Engineering, Gunma University
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Kondoh Y
Department Of Electronic Engineering Gunma University
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Kondoh Yoshiomi
Department Of Electrical Engineering College Of Technology Gunma University
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HIRANO Youichi
Electrotechnical Laboratory
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Ipposhi T
Advanced Device Development Dept. Renesas Technology Corp.
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SHIMADA Toshio
Energy Technology Division, Electrotechnical Laboratory, AIST, MITI
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Sakakita Hajime
National Institute Of Advanced Industrial Science And Technology
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浅井 朋彦
日本大学理工学部
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HAYASHI Yoshihiko
Research Reactor Institute, Kyoto University
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KOMATSU Futoshi
Renesas Semiconductor Engineering Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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TAKAKI Seiichi
Institute for Materials Research, Tohoku University
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SATOH Mamoru
Government Industrial Research Institute Osaka
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KINOMURA Atsushi
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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HORINO Yuji
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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NAKANO Yukihiro
Research Reactor Institute, Kyoto University
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Frassinetti Lorenzo
Consorzio Rfx Corso Stati Uniti
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MARTIN Piero
Consorzio RFX, Corso Stati Uniti
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ASAI Tomohiko
National Institute of Advanced Industrial Science and Technology (AIST)
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IKEDA Tatsuhiko
Advanced Device Development Dept., Renesas Technology Corp.
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Martin Piero
Consorzio Rfx Corso Stati Uniti
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Takaki Seiichi
Institute For Materials Research Tohoku University
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Nakano Yukihiro
Research Reactor Institute Kyoto University
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HIROTA Isao
Energy Technology Division, Electrotechnical Laboratory, AIST, MITI
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Nagata Akiyoshi
Plasma Engineering Faculty Of Engineering Hiroshima University
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Ikeda Tatsuhiko
Advanced Device Development Dept. Renesas Technology Corp.
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Takaki S
Institute For Materials Research Tohoku University
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Fukumi K
National Inst. Advanced Industrial Sci. And Technol. Jpn
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Fukumi Kohei
Government Industrial Research Institute Osaka
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Terranova David
Consorzio RFX, Associazione EURATOM-ENEA Association
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Innocente Paolo
Consorzio RFX, Associazione EURATOM-ENEA Association
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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OSAKABE Toyotaka
Japan Atomic Energy Agency
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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HIRANO Yuuichi
ULSI Development Center, Mitsubishi Electric Corporation
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FERNANDEZ Warren
ULSI Development Center, Mitsubishi Electric Corporation
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Kang Hee
Department Of Dermatology Ajou University School Of Medicine
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TAKASHINO Hiroyuki
Advanced Device Development Dept., Renesas Technology Corp.
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Chun Sung-yong
Department Of Materials Physics Osaka National Research Institute Aist
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Innocente Paolo
Consorzio Rfx Associazione Euratom-enea Sulla Fusione
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Satoh Masaharu
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Lorenzini Rita
Consorzio Rfx Associazione Euratom-enea Sulla Fusione
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SHIMIZU Ryuichi
Department of Applied Physics, Osaka University
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OSAKABE Toyotaka
Quantum Beam Science Directorate, Japan Atomic Energy Agency
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Malmberg Jenny-ann
Alfven Laboratory Royal Institute Of Technology
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KAMEARI Akihisa
Mitsubishi Atomic Power Ind., Inc.
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Terranova David
Rfx機構
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Terranova David
Consorzio Rfx Associazione Euratom-enea Sulla Fusione
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NAGATA Akiyoshi
Institute of Plasma Physics,Nagoya University
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CHAYAHARA Akiyoshi
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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Tajiri Eiichi
Department of Internal Medicine, Kasai City Hospital
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Kadono Kohei
Government Industrial Research Institute Osaka
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Sakaguchi Toru
Government Industrial Research Institute Osaka
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Miya Masaru
Government Industrial Research Institute Osaka
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Hayakawa Junji
Government Industrial Research Institute Osaka
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BEAG Young
Department of Applied Physics, Osaka University
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KIMURA Yoshihide
Department of Applied Physics, Osaka University
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FUJIMOTO Fuminori
Institute of Scientific and Industrial Research, Osaka University
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Osakabe T
Quantum Beam Science Directorate Japan Atomic Energy Agency
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Yamaguchi Y
Central Workshop Osaka University
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KINOMURA Atsushi
Department of Materials Physics, Osaka National Research Institute
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TSUBOUCHI Nobuteru
Department of Materials Physics, Osaka National Research Institute
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HECK Claire
Department of Materials Physics, Osaka National Research Institute
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HORINO Yuji
Department of Materials Physics, Osaka National Research Institute
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CHUN Sung-Yong
Osaka National Research Institute
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FUKUI Hirotaka
Adachi New Industrial Co., Ltd.
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KINOMURA Atsushi
Government Industrial Research Institute Osaka
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MOKUNO Yoshiaki
Government Industrial Research Institute Osaka
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OGAWA Kiyoshi
Musashi Institute of Technology
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Satoh M
Department Of Physics Faculty Of Science Okayama University
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OKAMOTO Masao
Institute of Plasma Physics, Nagoya University
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SEKINE Shigeyuki
Electrotechnical Laboratory, Umezono
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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MATSUOKA Akio
Department of Electrical Engineering, Gunma University
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ASHIDA Hisao
Electrotechnical Laboratory
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AMANO Tsuneo
Institute of Plasma Physics,Nagoya University
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Kang Hee
Department Of Applied Physics Osaka University:department Of Physics Sciences Chungbuk National Univ
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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TSUJIUCHI Mikio
Advanced Device Development Dept., Renesas Technology Corp.
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CHEN Daniel
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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YOSHIMURA Tsutomu
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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Sekine Shigeyuki
Electrotechnical Laboratory
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Yamaguchi Shigeo
Department Of Physics Faculty Of Science Tokyo Metropolitan University:(present Address)tokyo Metrop
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Ogawa K
Tokyo Institute Of Technology
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Kang H
Samsung Electronics Suwon Kor
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Beag Y
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Beag Young
Department Of Applied Physics Osaka University
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Chen Daniel
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Brunsell Per
Royal Institute Of Technology
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Ashida Hisao
Electrotechnical Laboratoryt
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Kadono K
Osaka National Research Inst. Osaka
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Amano T
National Inst. Fusion Sci. Nagoya
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Amano Tsuneo
Institute Of Plasma Physics Nagoya University
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Okamoto Masao
Institute Of Plasma Physics Nagoya University
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Matsuoka Akio
Department Of Electronic Engineering Gunma University
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Goto Sei-ichi
Tlasma Ohsics Laborotory Faculty Of Engineering Osaka University
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Tajiri Eiichi
Department Of Electronic Engineering Gunma University
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Yambe Kiyoyuki
Energy Technology Research Institute (etri) National Institute Of Advanced Industrial Science And Te
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Fukui Hirotaka
Adachi New Industrial Co. Ltd.
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TAKEUCHI Nobunao
Department of Electrical Engineering, Faculty of Engineering, Tohoku University
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Takeuchi N
Department Of Electrical Engineering Tohoku University
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Takeuchi Nobunao
Department Of Electrical Engineering Faculty Of Engineering Tohoku Universicy
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Yamaguchi Satarou
Mitsubishi Fusion Center,Mitsubishi Electric Co.
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Nogi Yasuyuki
College of Science and Technology, Nihon University
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Nogi Yasuyuki
College Of Science And Technology Nihon University
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Shimizu R
Osaka Univ. Osaka Jpn
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Shimizu Ryuichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Horino Yuji
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University
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SEKlNE Shigeyuki
Energy Technology Division, Electrotechnical Laboratory, AIST, MITI
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OSAKABE Takeshi
College of Science and Technology,Nihon University
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KOGUCHI Haruhisa
Electrotechnical Laboratory
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SAKAKITA Hajime
Electrotechnical Laboratory
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Nagata Akiyoshi
Institute Of Plasma Physics Nagoya University
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Tsujiuchi Mikio
Advanced Device Development Dept. Renesas Technology Corp.
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HIRANO Yoichi
Plasma Section, Energy Division, Electrotechnical Laboratory
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SHIMADA Toshio
Plasma Section, Energy Division, Electrotechnical Laboratory
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MAEJIMA Yoshiki
Plasma Section, Energy Division, Electrotechnical Laboratory
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YAGI Yasuyuki
Plasma Section, Energy Division, Electrotechnical Laboratory
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OGAWA Kiyosi
Plasma Section, Energy Division, Electrotechnical Laboratory
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HIRANO Yo-oichi
Electrotechnical Laboratory
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HIRANO Yo-ichi
Electrotechnical Laboratoryt
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Yamane Minoru
Mitsubishi Electric Corporation
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Oyabu Isao
Mitsubishi Electric Corporation
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Sugisaki Kiwamu
Electrotechnical Laboratory
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Kimura Yoshihide
Department Of Applied Physics Faculty Of Engineering Osaka University
著作論文
- Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
- Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
- High-Dose Implantation of MeV Carbon Ion into Silicon
- Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
- Focused High-Energy Heavy Ion Beams
- Ion-Beam 3C-SiC Heteroepitaxy on Si
- Neutron Activation Analysis of Ultrahigh-Purity Ti-Al Alloys in Comparison with Glow-Discharge Mass Spectrometry
- Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
- Neutron Activation Analysis of High-Purity Iron in Comparison with Chemical Analysis
- Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
- Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
- Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
- Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
- Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
- Operating Conditions to Achieve High Performance in PPCD in a Reversed-Field Pinch Plasma
- Operating Conditions to Achieve High Performance in PPCD in a Reversed-Field Pinch Plasma
- Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology
- A 90nm-node SOI Technology for RF Applications
- Effect of Pressure on Mode Transition Point of Reversed Field Pinch Plasma in Partially Relaxed States
- The First Plasma Rotation Measurement in a Large Reversed-Field Pinch Device,TPE-RX : Fluids, Plasmas, and Electric Discharges
- Deuterium Ice Pellet Injection during Pulsed Poloidal Current Drive Operation in Toroidal Pinch Experiment-RX Reversed-Field Pinch Device
- Observations of High Ion Temperatures in a Reversed Field Pinch Plasma
- Bolometric Measurement of Reversed Field Pinch Plasma in TPE-1R (M)
- Partially Relaxed Minimum Energy States of Reversed-Field-Pinch Plasma
- Effects of Impurities and Neutrals on Setting-Up Phase of Reversed Field Pinch
- A Realistic Approach to Improve the Shell Proximity of an RFP Device
- Partially Relaxed States of Plasmas in Two Different Types of Devices
- Control of the Locked Mode in a Reversed-Field Pinch Plasma Using a Rotating Toroidal Field
- Figure of Merit for the Improvement of Confinement in Pulsed Poloidal Current Drive Experiments in Reversed-Field Pinch Devices
- Measurement of Vacuum Vessel Current and its Relation to Locked Mode in a Reversed-field Pinch Device, TPE-RX(Nuclear Science, Plasmas, and Electric Discharges)
- Confinement Improvement in a Single Helical State of' the Reversed Field Pinch Plasma on TPE-1RM20 : Fluids, Plasmas, and Electric Discharges
- Plasma and Mode Rotations in a Reversed-Field Pinch Device, TPE-1RM20
- Outline of a Large Reversed Field Pinch Machine,TPE-RX
- Measurement of Fast Electron Velocity Distribution Function in a Reversed Field Pinch Plasma