Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• Hirao T

  Advanced Device Development Dept. Renesas Technology Corp.

• Horino Y

  Advanced Device Development Dept. Renesas Technology Corp.

• KOMATSU Futoshi

  Renesas Semiconductor Engineering Corp.

• IWAMATSU Toshiaki

  Advanced Device Development Dept., Renesas Technology Corp.

• HIRANO Yuuichi

  Advanced Device Development Dept., Renesas Technology Corp.

• TAKASHINO Hiroyuki

  Advanced Device Development Dept., Renesas Technology Corp.

• IPPOSHI Takashi

  Advanced Device Development Dept., Renesas Technology Corp.

• MAEGAWA Shigeto

  Advanced Device Development Dept., Renesas Technology Corp.

• INUISHI Masahide

  Advanced Device Development Dept., Renesas Technology Corp.

• OHJI Yuzuru

  Advanced Device Development Dept., Renesas Technology Corp.

• Maegawa Shigeto

  Advanced Device Development Dept. Renesas Technology Corp.

• HIRANO Yoichi

  National Institute of Advanced Industrial Science and Technology (AIST)

• Horiba Yasutaka

  System Lsi Laboratory Mitsubishi Electric Corporation

• Ipposhi Takashi

  Advanced Device Development Dept. Renesas Technology Corp.

• Iwamatsu Toshiaki

  Advanced Device Development Dept. Renesas Technology Corp.

• Ohji Yuzuru

  Advanced Device Development Dept. Renesas Technology Corp.

• Hirano Y

  Advanced Device Development Dept. Renesas Technology Corp.

• Ipposhi T

  Advanced Device Development Dept. Renesas Technology Corp.

• Inuishi Masahide

  Advanced Device Development Dept. Renesas Technology Corp.

• Ipposhi Takashi

  Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Ohji Yuzuru

  Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Hirano Yuuichi

  Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Iwamatsu Toshiaki

  Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Inuishi Masahide

  Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

関連論文

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