W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory
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概要
- 論文の詳細を見る
A new W-polymetal gate electrode with the structure of W/WN/WSi/poly-Si is proposed. The W-polymetal gate is suitable for high-density memories since it has low resistance and is compatible with the self-aligned contact process. In our study, however, it is found that the interface of W and poly-Si has non-ohmic and quite high resistance in the case wherein only WN is used as a barrier film. This resistance increases the delay in complementary metal-oxide-semiconductor (CMOS) logic circuits and prevents high-speed operation. Our new process includes the deposition of thin WSi on poly-Si, followed by rapid thermal annealing, which results in ohmic and sufficiently low contact resistance between W and poly-Si. It is also demonstrated that selective gate reoxidation is successfully applied for this new structure, and the insertion of thin WSi does not cause any adverse effect on the electrical characteristics of metal-oxide-semiconductor field-effect transistor (MOSFET). This process is promising for high-speed and high-density embedded memory.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Eimori Takahisa
Advanced Device Development Department Renesas Technology Corporation
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Nishida Yukio
Advanced Device Development Department Renesas Technology Corporation
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HAYASHI Kiyoshi
Advanced Device Development Department, Renesas Technology Corporation
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Yamashita Tomohiro
Advanced Device Development Department Renesas Technology Corporation
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Eimori Takahisa
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ohji Yuzuru
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yamashita Tomohiro
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inuishi Masahide
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Nishida Yukio
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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