Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• INUISHI Masahide

  ULSI Laboratory, Mitsubishi Electric Corporation

• MIYOSHI Hirokazu

  ULSI Laboratory, Mitsubishi Electric Corporation

• KUROI Takashi

  ULSI Development Center, Mitsubishi Electric Corporation

• Abe Yuji

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• SHIRAHATA Masayoshi

  ULSI Development Center, Mitsubishi Electric Corporation

• Miyoshi Hirokazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Okumura Yoshihiro

  Research Institute Of Electronics Shizuoka University

• OKUMURA Yoshinori

  ULSI Laboratory, Mitsubishi Electric Corporation

• Kuroi T

  Ulsi Development Center Mitsubishi Electric Corporation

• Kuroi Takashi

  Ulsi Development Center Mitsubishi Electric Corporation

• Okumura Y

  Minolta Co. Ltd. Osaka Jpn

• Miyoshi Hirokazu

  徳島大学医学部

• Inuishi Masahide

  Advanced Device Development Dept. Renesas Technology Corp.

• Inuishi Masahide

  Ulsi Development Center Mitsubishi Electric Corporation

• Shirahata M

  Ulsi Laboratory Mitsubishi Electric Corporation

• Shirahata Masayoshi

  Ulsi Development Center Mitsubishi Electric Corporation

• Abe Yuji

  Advanced R&d Technology Center Mitsubishi Electric Corporation

• Abe Yuji

  Advanced Technology R & D Center Mitsubishi Electric Corporation

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