Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-30

著者

• INUISHI Masahide

  ULSI Laboratory, Mitsubishi Electric Corporation

• INOUE Yasuo

  ULSI Development Center, Mitsubishi Electric Corporation

• INUISHI Masahide

  Advanced Device Development Dept., Renesas Technology Corp.

• Inoue Y

  National Defense Acad. Yokosuka Jpn

• KUROI Takashi

  ULSI Development Center, Mitsubishi Electric Corporation

• Yamashita Tsutomu

  National Institute For Material Science (nims):new Industry Creation Hatchery Center (niche) Tohoka

• Yamashita Tomohiro

  Ulsi Development Center Mitsubishi Electric Corporation

• Kitazawa M

  Ulsi Development Center Mitsubishi Electric Corporation

• IZUMI Yoshitaka

  NHK Science and Technical Research Laboratories

• Inoue Y

  Ntt Access Network Service Systems Laboratories Ntt Corporation

• Kuroi T

  Ulsi Development Center Mitsubishi Electric Corporation

• Kuroi Takashi

  Ulsi Development Center Mitsubishi Electric Corporation

• KITAZAWA Masashi

  ULSI Development Center, Mitsubishi Electric Corporation

• KAWASAKI Yoji

  ULSI Development Center, Mitsubishi Electric Corporation

• TAKASHINO Hiroyuki

  ULSI Development Center, Mitsubishi Electric Corporation

• Iwai Yuki

  Dep. Of Electronics And Bioinformatics Sci. And Technol. Meiji Univ.

• Inuishi Masahide

  Advanced Device Development Dept. Renesas Technology Corp.

• Inuishi Masahide

  Ulsi Development Center Mitsubishi Electric Corporation

• Yamashita Tsutomu

  Nanomaterials Laboratory National Institute For Materials Science

• Kawasaki Yoji

  Ulsi Development Center Mitsubishi Electric Corporation

• Inoue Yasuo

  Ulsi Development Center Mitsubishi Electric Corporation

• Takashino Hiroyuki

  Ulsi Development Center Mitsubishi Electric Corporation

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