Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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NAKAYAMA Kouichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAOKA Hiromichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAI Mikio
Research Center for Materials Science at Extreme Conditions, Osaka University
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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KINOMURA Atsushi
ONRI, AIST
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HORINO Yuji
ONRI, AIST
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Takai M
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Yamaguchi Y
Central Workshop Osaka University
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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Nakayama Kazuhiko
Mechanical Processing Technology Research Laboratories Kao Corporation
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Nakayama K
National Inst. Advanced Industrial Technol. And Sci. Ibaraki Jpn
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Ulsi Development Center Mitsubishi Electric Corporation
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Kinomura A
National Institute Of Advanced Industrial Science And Technology
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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Takai Mikio
Faculty Of Engineering Science And Reseatch Center For Extreme Materials
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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