Direct Measurement of Transient Drain Currents in Partially-depleted SOI NMOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
スポンサーリンク
概要
著者
-
Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
-
IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
-
Nakayama Kazuhiko
Mechanical Processing Technology Research Laboratories Kao Corporation
-
Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
-
Nakayama K
National Inst. Advanced Industrial Technol. And Sci. Ibaraki Jpn
-
Takaoka H
The Functional Devices Research Laboratories Nec Corporation
関連論文
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
- The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
- Comparison of Standard and Low-Dose Separation-by-Implanted-Oxygen Substrates for 0.15 μm SOI MOSFET Applications
- High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure
- Comparison of Standard and Low-Dose SIMOX Substrates for 0.15μm SOI MOSFET Applications
- Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
- Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
- Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
- Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond
- Formation of KrF Excimer Using a Laser-Induced Harpooning Reaction through Two-Photon Pumping
- Lifetime Measurements for KrF Excimer Using Photoassociative Pumping
- Absolute Measurement of Lattice Spacing d(220)in Floating Zone Silicon Crystal
- Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
- Nature of Tip-Sample Interaction in Dynamic Mode Atomic Force Microscopy
- Tip-Induced Surface Disorder on Hydrogen-Terminated Silicon(111) Surface Observed by Ultrahigh-Vacuum Atomic Force Microscopy
- Observation of Hydrogen-Terminated Silicon (111) Surface by Ultrahigh-Vacuum Atomic Force Microscopy
- Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology
- A 90nm-node SOI Technology for RF Applications
- Output Enhancement Effect of Magnetic Underlayer in High-Density Magnetic Recording
- Metal Particulate (MP)/Metal Evaporation (ME) Double-Layered Media for High-Density Recording
- Tunable Optical Stop Band and Reflection Peak in Synthetic Opal Infiltrated with Liquid Crystal and Conducting Polymer as Photonic Crystal
- Influence of Underlayer Magnetic Properties upon Output in Metal Particulate Double-Layered Tape
- Optical recording using smectic layer rotation in ferroelectric liquid crystal
- Light Bounces in Two-Beam Scanning Laser Interferometers
- Direct Measurement of Transient Drain Currents in Partially-depleted SOI NMOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- Light Bounces in Two-Beam Scanning Laser Interferometers
- Optical Recording in Ferroelectric Liquid Crystal Using N^*-SmC^* Phase Transition
- Electric Field-Induced Migration of SiO_2 Particles in Smectic Liquid Crystal
- Control of Layer Arrangement by Electric Field in Ferroelectric and Antiferroelectric Liquid Crystals
- Smectic Layer Rotation in the Smectic A Phase of Ferroelectric and Antiferroelectric Liquid Crystals
- Effect of Trans-Cis Isomerization of a Chiral Azo-Dye on Dye-Induced Ferroelectricity in an Achiral Liquid Crystal
- Smectic Layer Rotation in Ferroelectric Liquid Crystals
- Smectic Layer Rotation in Antiferroelectric Liquid Crystal
- Aspects of the Conductivity Modulation Enhancement Effect in a 4500 V Planar Metal Oxide Semiconductor Device and Its Electrical Characteristics
- Nonvolatile Memory Based on Phase Transition in Chalcogenide Thin Film
- Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs(Special Issue on Electronic Displays)
- A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology
- Electrical Characteristics and Crystal Quality Analysis of Thin-Body $\langle 100\rangle$ Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using Two-Step Elevated Silicon Epitaxial Process