Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs(Special Issue on Electronic Displays)
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概要
- 論文の詳細を見る
We have successfully produced laterally-grown grains on large (300×350mm) glass substrates by means of a newly developed excimer laser crystallization system that features a high-precision mask stage and an auto-focusing system. The original grains were produced with a steep beam edge and their lateral growth was extended by repeated irradiation and translation. TFTs fabricated with these extended grains were found to have mobilities that remained almost constant at 270 cm^2/Vs (n-ch. TETs) and 230 cm^2/Vs (p-ch. TFTs) over a wide range of laser fluence (400-600 mJ/cm^2).
- 社団法人電子情報通信学会の論文
- 2002-11-01
著者
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Suzuki Takaomi
The Research And Development Center Sumitomo Heavy Industries Ltd.
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Hayama Hiroshi
The Functional Devices Research Laboratories Nec Corporation
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Takaoka H
The Functional Devices Research Laboratories Nec Corporation
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Sasaki Takuya
The Research And Development Center Sumitomo Heavy Industries Ltd.
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TAKAOKA Hiromichi
the Functional Devices Research Laboratories, NEC Corporation
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SATOU Yoshinobu
the Functional Devices Research Laboratories, NEC Corporation
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TANABE Hiroshi
the Functional Devices Research Laboratories, NEC Corporation
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Satou Yoshinobu
The Functional Devices Research Laboratories Nec Corporation
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Tanabe Hiroshi
The Functional Devices Research Laboratories Nec Corporation
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Takaoka Hiromichi
The Functional Devices Research Laboratories Nec Corporation
関連論文
- Direct Measurement of Transient Drain Currents in Partially-depleted SOI NMOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs(Special Issue on Electronic Displays)