Aspects of the Conductivity Modulation Enhancement Effect in a 4500 V Planar Metal Oxide Semiconductor Device and Its Electrical Characteristics
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概要
- 論文の詳細を見る
A new high-power (4500 V) planar metal oxide semiconductor (MOS) device is fabricated and its properties are evaluated. It has low forward voltage drop and a large reverse bias safe operating area (RBSOA), and allows easy MOS control. These properties are superior to those of the conventional insulated gate bipolar transistor (IGBT) and the gate turn-off thyristor (GTO). This is due to the conductivity modulation enhancement effect resulting from an extremely wide gate electrode, which increases the hole storage and the electron injection. At the same time, the junction field effect transistor (JFET) resistance effect does not affect the forward voltage drop. The rate of increase of the off-state voltage (dV_D/dt) during the turn-off process affects RBSOA markedly, therefore, it is important to set the gate resistance to an appropriate value. The press pack device that includes 20 chips of this device and 10 fast recovery diode chips can turn off a current of 1200 A at 3600 V DC voltage supply without a snubber circuit.
- 社団法人応用物理学会の論文
- 1998-09-15
著者
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MATSUDA Hiro
National Institute of Advanced Industrial Science and Technology
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Nakayama Kazuhiko
Mechanical Processing Technology Research Laboratories Kao Corporation
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Matsuda H
Department Of Applied Chemistry Faculty Of Engineering Osaka Institute Of Technology
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Nakayama Kazuya
Advanced Semiconductor Devices Research Laboratories Toshiba Corporation
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Matsuda Hideo
Microelectronics Center Toshiba Corporation
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