Comparison of Standard and Low-Dose Separation-by-Implanted-Oxygen Substrates for 0.15 μm SOI MOSFET Applications

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Hirao T

  Advanced Device Development Dept. Renesas Technology Corp.

• Yamaguchi Y

  Tohoku Univ. Sendai

• Yamaguchi Y

  Kumamoto Techno Res. Park Kumamoto Jpn

• YAMAGUCHI Yasuo

  ULSI Laboratory, Mitsubishi Electric Corporation

• INOUE Yasuo

  ULSI Development Center, Mitsubishi Electric Corporation

• HIRAO Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• JOACHIM Hans-Oliver

  ULSI Laboratory, Mitsubishi Electric Corporation

• FUJINO Takeshi

  ULSI Laboratory, Mitsubishi Electric Corporation

• KATO Takaaki

  ULSI Laboratory, Mitsubishi Electric Corporation

• Inoue Y

  National Defense Acad. Yokosuka Jpn

• Joachim Hans-oliver

  Ulsi Laboratory Mitsubishi Electric Corporation

• Yamaguchi Y

  Central Workshop Osaka University

• Fujino T

  Inst. Molecular Sci. (ims) Okazaki

• Fujino Takeshi

  Ulsi Laboratory Mitsubishi Electric Corporation

• Kato Takaaki

  Ulsi Laboratory Mitsubishi Electric Corporation

• Inoue Yasuo

  Ulsi Development Center Mitsubishi Electric Corporation

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