Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak
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概要
- 論文の詳細を見る
- 2003-04-30
著者
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EIMORI Takahisa
ULSI Development Center, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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UENO Shuichi
ULSI Development Center, Mitsubishi Electric Corporation
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Eimori Takahisa
Ulsi Development Center Mitsubishi Electric Corporation
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Nishida Yukio
Ulsi Development Center Mitsubishi Electric Corporation
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UCHIDA Tetsuya
ULSI Laboratory, Mitsubishi Electric Corporation
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EIKYU Katsumi
ULSI Development Center, Mitsubishi Electric Corporation
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KINUGASA Akinori
ULSI Development Center, Mitsubishi Electric Corporation
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TERAUCHI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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TSUNOMURA Takaaki
ULSI Development Center, Mitsubishi Electric Corporation
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TAKEUCHI Masahiko
ULSI Development Center, Mitsubishi Electric Corporation
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SHIRAHATA Masayoshi
ULSI Development Center, Mitsubishi Electric Corporation
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Terauchi Takashi
Ulsi Development Center Mitsubishi Electric Corporation
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Eikyu Katsumi
Ulsi Development Center Mitsubishi Electric Corporation
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Uchida Tetsuya
Ulsi Development Center Mitsubishi Electric Corporation
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Kinugasa Akinori
Ulsi Development Center Mitsubishi Electric Corporation
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Takeuchi Masahiko
Ulsi Development Center Mitsubishi Electric Corporation
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Tsunomura Takaaki
Ulsi Development Center Mitsubishi Electric Corporation
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Shirahata Masayoshi
Ulsi Development Center Mitsubishi Electric Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Ueno Shuichi
Ulsi Development Center Mitsubishi Electric Corporation
関連論文
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- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
- Comparison of Standard and Low-Dose Separation-by-Implanted-Oxygen Substrates for 0.15 μm SOI MOSFET Applications
- High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure
- Comparison of Standard and Low-Dose SIMOX Substrates for 0.15μm SOI MOSFET Applications
- Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
- Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influemce on Short-Channel Effects in SOI MOSFET's
- Analytical Modeling of Short-Channel Behavior of Accumulation-Mode Transistors on Silicon-on-Insulator Substrate
- Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
- Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond
- Saturation Phenomenon of Stress-Induced Gate Leakage Current
- Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak
- Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory
- High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Clarification of Nitridation Effect on Oxide Formation Methods
- 3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications (Special Issue on TCAD for Semiconductor Industries)
- Realistic Scaling Scenario for Sub-100 nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation(the IEEE International Conference on SISPAD '02)
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
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- The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
- Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
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- Clarification of Nitridation Effect on Oxide Formation Methods
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