Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-08-15

著者

• NISHIMURA Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• EIMORI Takahisa

  ULSI Development Center, Mitsubishi Electric Corporation

• MIYOSHI Hirokazu

  ULSI Laboratory, Mitsubishi Electric Corporation

• Eimori T

  Mitsubishi Electric Corp. Hyogo Jpn

• Eimori Takahisa

  Ulsi Development Center Mitsubishi Electric Corporation

• Ohno Y

  Nagoya Univ. Naogya Jpn

• Ohno Yoshikazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• MORIHARA Toshinori

  ULSI Laboratory, Mitsubishi Electric Corporation

• KATAYAMA Toshiharu

  ULSI Laboratory, Mitsubishi Electric Corporation

• SATOH Shinichi

  ULSI Laboratory, Mitsubishi Electric Corporation

• Satoh Shin-ichi

  ULSI Laboratory, Mitsubishi Electric Corporation

• Satoh S

  Mitsubishi Electric Corp. Hyogo Jpn

• Miyoshi Hirokazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Nishimura Tadashi

  The Ulsi Development Center Mitsubishi Electric Corporation

• Morihara Toshinori

  Ulsi Laboratory Mitsubishi Electric Corporation

• Miyoshi H

  Mitsubishi Electric Corp.

• Miyoshi Hirokazu

  徳島大学医学部

• Katayama Toshiharu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Nishimura Tadashi

  Ulsi Development Center Mitsubishi Electric Corporation

• Katayama Toshiharu

  ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

関連論文

• 20pHT-5 高濃度ドーパント添加シリコン中の転位の構造特性(20pHT 格子欠陥,ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 20pHT-10 ゲルマニウム中の酸素不純物の赤外分光法による評価(20pHT 格子欠陥,ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 25pYK-7 ゲルマニウム中の転位の運動速度(格子欠陥・ナノ構造(半導体,理論,力学物性),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 26pYH-2 電気的ブレイクダウンによるシリコンナノチェイン/カーボンナノチューブ変換(ナノチューブ・ナノワイヤ,領域9,表面・界面,結晶成長)
• 25aYC-5 ナノ領域に選択成長させた触媒からのナノワイヤ生成(25aYC ナノチューブ・ナノワイヤ・結晶成長,領域9(表面・界面,結晶成長))
• 24aZD-9 成長中光照射によるZnSe擬似格子整合膜の構造変化(24aZD 領域10,領域4合同招待講演,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• Opto-TEM 法によるw-ZnO中の転位の光学応答解析
• 25pYK-5 シリコン結晶育成時のシード・結晶界面でのミスフィット転位発生(格子欠陥・ナノ構造(半導体,理論,力学物性),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 27pRB-5 シリコンの曲げ変形と転位の動特性(27pRB 格子欠陥・ナノ構造(転位・表面・界面),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pWA-13 ZnO結晶の硬度特性と転位挙動(22pWA 格子欠陥・ナノ構造(電子状態・表面界面・転位・面欠陥),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pWA-11 ZnO中の転位の電子励起誘起運動(22pWA 格子欠陥・ナノ構造(電子状態・表面界面・転位・面欠陥),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pPSA-39 個々のナノチェインの電気的ブレイクダウン(22pPSA 領域9ポスターセッション,領域9(表面・界面,結晶成長))
• 24pYF-15 ZnO中の転位に関係する局在電子準位(格子欠陥・ナノ構造(半導体),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24aYF-6 ワイドギャップ半導体の強度特性と転位運動(格子欠陥・ナノ構造(力学物性・転位),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pTA-8 塑性変形したバルクZnO単結晶の降伏強度と転位の運動(格子欠陥・ナノ構造(転位・機械的性質),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pTA-9 塑性変形したZnOの光学特性(格子欠陥・ナノ構造(転位・機械的性質),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pXC-2 VLS成長によるシリコンナノワイヤーの臨界直径(ナノワイヤ・ナノチューブ,領域9(表面・界面, 結晶成長))
• 13pTJ-11 TEM-CL 法による双晶面が存在する AlGaAs の光学特性の評価(電子線, 領域 10)
• 15aPS-25 荒れた表面における吸着原子の表面拡散係数(領域 9)
• 12aXG-12 触媒 CVD 法によるシリコンナノワイヤー成長初期過程の定量解析(ナノチューブ・ナノワイヤ, 領域 9)
• Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
• Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
• Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
• The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
• Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
• Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
• Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
• Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
• Analytical Modeling of Short-Channel Behavior of Accumulation-Mode Transistors on Silicon-on-Insulator Substrate
• 26aWZ-4 P添加Si中の転位構造(26aWZ 格子欠陥・ナノ構造(半導体),領域10(誘電体格子欠陥,X線・粒子線フォノン))
• 26aWZ-3 高濃度に不純物を添加したゲルマニウム結晶中での転位の挙動(26aWZ 格子欠陥・ナノ構造(半導体),領域10(誘電体格子欠陥,X線・粒子線フォノン))
• Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
• Saturation Phenomenon of Stress-Induced Gate Leakage Current
• Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak
• Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
• (Ba_<0.75>Sr_<0.25>)TiO_3 Films for 256 Mbit DRAM (Special Issue on Quarter Micron Si Device and Process Technologies)
• Impact of Organic Contaminants from the Environment of Electrical Characteristics of Thin Gate Oxides
• Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
• Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
• Control of Carrier Collection Efficiency in n+p Diode with Retrograde Well and Epitaxial Layers
• Control of Carrier Collection Efficiency in n^+p Diode with Retrograde Well and Epitaxial Layers
• Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
• Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
• Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory
• Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
• Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation
• New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe
• Semiconductor Spin Electronics
• A Spin Esaki Diode
• 28aXT-5 ラフネスを導入したSi表面上におけるAu原子の拡散(格子欠陥・ナノ構造)(領域10)
• 20pYD-5 電子線照射した Si(100) 表面上での吸着原子の拡散と集合
• 28pPSB-44 Si 表面ナノホールが存在する表面での Au 集合体の形成
• 27aYG-8 再成長界面を基点に形成されるAlGaAs中の双晶の光学特性(化合物・輸送・アモルファス・不純物)(領域4)
• Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
• Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
• Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
• Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
• Photoresponse of Carbon Nanotube Field-Effect Transistors
• Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
• Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
• High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
• Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
• Clarification of Nitridation Effect on Oxide Formation Methods
• Circuit-Level Electrothermal Simulation of Electrostatic Discharge in Integrated Circuits (Special lssue on SISPAD'99)
• 3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications (Special Issue on TCAD for Semiconductor Industries)
• Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
• Memory Array Architecture and Decoding Scheme for 3 V Only Sector Erasable DINOR Flash Memory (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
• The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
• Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
• Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency
• Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure
• A 0.4 μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories
• Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
• Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors
• High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
• Stable Solution Method for Viscoelastic Oxidation Including Stress-Dependent Viscosity
• 27pTJ-15 高濃度に不純物を添加したゲルマニウム結晶中での転位の挙動(そのII)(27pTJ 格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 27pTJ-14 高濃度ボロン添加シリコンにおける銅析出物の研究(27pTJ 格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 27pTJ-19 ZnO中のプリズム面上転位の光学特性(27pTJ 格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 27pTJ-17 低温堆積GaNバッファ層の結晶化初期段階における成長方位の変化(27pTJ 格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 22aGQ-3 高濃度ボロン添加シリコンにおける銅析出物の研究 その2(22aGQ 格子欠陥・ナノ構造(シリコン系材料),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 22aGQ-1 高濃度に不純物を添加したゲルマニウム結晶中での転位の挙動(そのIII)(22aGQ 格子欠陥・ナノ構造(シリコン系材料),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 22aGQ-4 第一原理計算によるSi中のCu析出物の相安定性(22aGQ 格子欠陥・ナノ構造(シリコン系材料),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 22pGQ-3 非極性GaN成長における低温バッファ層の微視的構造(22pGQ 格子欠陥・ナノ構造(半導体・誘電体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 22pGQ-2 ZnO中のプリズム面上転位の電子状態(22pGQ 格子欠陥・ナノ構造(半導体・誘電体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 22aGQ-11 P,Bを含んだSi結晶の積層欠陥エネルギーの第一原理計算(22aGQ 格子欠陥・ナノ構造(シリコン系材料),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• Estimation of Height of Barrier Formed in Metallic Carbon Nanotube (Special Issue : Solid State Devices and Materials (1))
• Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird’s Beak
• 24pCD-6 IV族不純物添加ゲルマニウム結晶中の転位の運動(24pCD 格子欠陥・ナノ構造(転位・力学特性),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 24aCD-4 赤外吸収による熱処理したGe単結晶内の格子間酸素の測定(24aCD 格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 24aCD-1 GeAs/Ge(111)界面の構造解析(24aCD 格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 19pAR-5 ゲルマニウム単結晶における酸素の熱処理による拳動(19pAR 格子欠陥・ナノ構造(金属・半導体・表面・界面・微粒子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 27aXS-9 Ge単結晶におけるサーマルドナーの赤外吸収スペクトル(27aXS 格子欠陥・ナノ構造(転位・界面・半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 26pKA-8 各種の不純物を高濃度に添加したシリコン結晶の格子定数(格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 26pKA-6 高濃度Sn添加ゲルマニウム結晶における酸素同時添加の影響(格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• シリコン中におけるΣ3{111}粒界と不純物の相互作用(格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))

もっと見る 閉じる

スポンサーリンク