Semiconductor Spin Electronics

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概要

• 論文の詳細を見る
• 2002-01-10

著者

• OHNO Hideo

  Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University

• Ohno H

  Jaeri-riken Spring-8 Project Team

• Ohno Hideo

  Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute

• Ohno Hideo

  Laboratory For Electronic Intelligent Systems

• Ohno Y

  Jst‐presto Saitama Jpn

• MATSUKURA Fumihiro

  Research Institute of Electrical Communication, Tohoku University

• Ohno Yoshikazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Matsukura F

  Research Institute Of Electrical Communications

• Matsukura Fumihiro

  Hokkaido University

• Matsukura Fumihiro

  Research Institute Of Electrical Communication Tohoku University

• OHNO Yuzo

  Tohoku University

• Okamoto Yasunori

  Research And Headquarters Kubota Corporation

• Matsukura Fumihiro

  Research Institute Of Electrical Communications

関連論文

• 20pHT-5 高濃度ドーパント添加シリコン中の転位の構造特性(20pHT 格子欠陥,ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 20pHT-10 ゲルマニウム中の酸素不純物の赤外分光法による評価(20pHT 格子欠陥,ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 25pYK-7 ゲルマニウム中の転位の運動速度(格子欠陥・ナノ構造(半導体,理論,力学物性),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
• 26pYH-2 電気的ブレイクダウンによるシリコンナノチェイン/カーボンナノチューブ変換(ナノチューブ・ナノワイヤ,領域9,表面・界面,結晶成長)
• 25aYC-5 ナノ領域に選択成長させた触媒からのナノワイヤ生成(25aYC ナノチューブ・ナノワイヤ・結晶成長,領域9(表面・界面,結晶成長))
• 24aZD-9 成長中光照射によるZnSe擬似格子整合膜の構造変化(24aZD 領域10,領域4合同招待講演,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• Opto-TEM 法によるw-ZnO中の転位の光学応答解析
• 25pYK-5 シリコン結晶育成時のシード・結晶界面でのミスフィット転位発生(格子欠陥・ナノ構造(半導体,理論,力学物性),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 27pRB-5 シリコンの曲げ変形と転位の動特性(27pRB 格子欠陥・ナノ構造(転位・表面・界面),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pWA-13 ZnO結晶の硬度特性と転位挙動(22pWA 格子欠陥・ナノ構造(電子状態・表面界面・転位・面欠陥),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pWA-11 ZnO中の転位の電子励起誘起運動(22pWA 格子欠陥・ナノ構造(電子状態・表面界面・転位・面欠陥),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pPSA-39 個々のナノチェインの電気的ブレイクダウン(22pPSA 領域9ポスターセッション,領域9(表面・界面,結晶成長))
• 24pYF-15 ZnO中の転位に関係する局在電子準位(格子欠陥・ナノ構造(半導体),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24aYF-6 ワイドギャップ半導体の強度特性と転位運動(格子欠陥・ナノ構造(力学物性・転位),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pTA-8 塑性変形したバルクZnO単結晶の降伏強度と転位の運動(格子欠陥・ナノ構造(転位・機械的性質),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pTA-9 塑性変形したZnOの光学特性(格子欠陥・ナノ構造(転位・機械的性質),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pXC-2 VLS成長によるシリコンナノワイヤーの臨界直径(ナノワイヤ・ナノチューブ,領域9(表面・界面, 結晶成長))
• 13pTJ-11 TEM-CL 法による双晶面が存在する AlGaAs の光学特性の評価(電子線, 領域 10)
• 15aPS-25 荒れた表面における吸着原子の表面拡散係数(領域 9)
• 12aXG-12 触媒 CVD 法によるシリコンナノワイヤー成長初期過程の定量解析(ナノチューブ・ナノワイヤ, 領域 9)
• Spin Polarization Dependent Far Infrared Absorption in Ga_Mn_xAs : Semiconductors
• Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
• 26aWZ-4 P添加Si中の転位構造(26aWZ 格子欠陥・ナノ構造(半導体),領域10(誘電体格子欠陥,X線・粒子線フォノン))
• 26aWZ-3 高濃度に不純物を添加したゲルマニウム結晶中での転位の挙動(26aWZ 格子欠陥・ナノ構造(半導体),領域10(誘電体格子欠陥,X線・粒子線フォノン))
• Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
• High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
• Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs
• Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
• Semiconductor Spin Electronics
• A Spin Esaki Diode
• Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
• Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs(211)B
• Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs (211)B
• (Ga, Mn)As /GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy
• Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
• Giant TMR in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
• Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer
• Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering
• Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature
• 28aXT-5 ラフネスを導入したSi表面上におけるAu原子の拡散(格子欠陥・ナノ構造)(領域10)
• 20pYD-5 電子線照射した Si(100) 表面上での吸着原子の拡散と集合
• 28pPSB-44 Si 表面ナノホールが存在する表面での Au 集合体の形成
• 27aYG-8 再成長界面を基点に形成されるAlGaAs中の双晶の光学特性(化合物・輸送・アモルファス・不純物)(領域4)
• Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
• Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
• Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
• Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
• Photoresponse of Carbon Nanotube Field-Effect Transistors
• Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
• Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
• Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
• Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator
• Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
• Blue Light-Emitting Diode Based on ZnO
• A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves : Surfaces, Interfaces and Films
• Electronic Properties of a Photochemical Oxide-GaAs Interface
• InP High Mobility Enhancement MISFETs Using Anodically Grown Al_2O_3-Native Oxide/InP Interface : LATE NEWS
• Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy
• Free Carrier Profile Synthesis in MOCVD Grown GaAs by 'Atomic-Plane' Doping
• Deep Electron Traps in Undoped GaAs Grown by MOCVD
• Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers
• Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices
• Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
• Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well
• Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
• Structural Analysis of Molten Na_2BeF_4 and NaBeF_3 by X-ray Diffraction(Materials, Metallurgy, Weldability)
• Structural Analysis of Molten Na_2BeF_4 by X-ray Diffraction
• Self-Diffusion of Sodium and Potassium in Molten Flinak
• Self-Diffusion of Fluorine and Lithium in Molten Flinak
• Self-Diffusion of Lithium in Molten LiBeF_3
• Self-Diffusion of Lithium in Molten Li_2BeF_4
• Self-Diffusion of Fluorine in Molten LiBeF_3
• Electric Field Control of Ferromagnetism in Semiconductors
• GaAs and In_Ga_As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE : Surfaces, Interfaces and Films
• Trimethylgallium Supply without the Use of Bubbling in GaAs Growth by Metalorganic Vapor Phase Epitaxy
• Thermally Activated Longitudinal Optical Phonon Scattering of a 3.8 THz GaAs Quantum Cascade Laser
• Spin Dependent Phenomena in Magnetic and Non-Magnetic III-V's
• Spintronics : From Materials to Circuits
• Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers
• Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation
• Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer
• Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope
• Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme
• Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
• Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
• Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field
• InAs Quantum Cascade Lasers Based on Coupled Quantum Well Structures
• Size Dependence of Magnetic Properties of Nanoscale CoFeB--MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance
• A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 μm
• Current-Assisted Domain Wall Motion in Ferromagnetic Semiconductors
• An InAs-Based Intersubband Quantum Cascade Laser
• Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
• Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering
• High-Mobility Field-Effect Transistors Based on Single-Crystalline ZnO Channels
• Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field

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