Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-12-10
著者
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IKEDA Shoji
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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SASAKI Ryutaro
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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MEGURO Toshiyasu
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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MATSUKURA Fumihiro
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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OHNO Hideo
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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HAYAKAWA Jun
Hitachi Advanced Research Laboratory
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OHNO Hideo
RIEC, Tohoku University
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Lee Young
Laboratory For Nanoelectronics And Spintronics Riec Tohoku Univ.
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HAYAKAWA Jun
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho
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Ohno Hideo
Tohoku Univ. Sendai Jpn
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Sasaki Ryutaro
Laboratory For Nanoelectronics And Spintronics Riec Tohoku University
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Matsukura Fumihiro
Laboratory For Nanoelectronics And Spintronics Riec Tohoku University
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Matsukura Fumihiro
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Meguro Toshiyasu
Laboratory For Nanoelectronics And Spintronics Riec Tohoku University
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Ikeda Shoji
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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IKEDA Shoji
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
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