Trimethylgallium Supply without the Use of Bubbling in GaAs Growth by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
In the growth of GaAs by metalorganic vapor phase epitaxy using trimethylgallium (TMG), TMG is usually transported by H_2 carrier gas saturated with TMG, Saturation of H_2 is normally done by bubbling H_2 gas through liquid TMG. Here, we show that saturation of H_2 with TMG can be achieved through flowing H_2 over the liquid or solid TMG, i.e. without the use of bubbling. The growth rate of GaAs grown by TMG supplied in this way with AsH_3 showed a linear dependence with the flow rate of H_2 over TMG regardless of whether TMG was liquid or solid.
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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Ohno H
Jaeri-riken Spring-8 Project Team
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Ohno Hideo
Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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OHTSUKA Shunsuke
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Ohtsuka Shunsuke
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Ohuchi Atsushi
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Ohno Hideo
Department Of Chemistry Faculty Of Science Kyoto University
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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