Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate
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概要
- 論文の詳細を見る
Fabrication technology of InGaAs wire structures by preferential molecular beam epitaxy growth on corrugated InP substrate was successfully developed for the first time. Growth was made on the substrates having V-grooves with (211)A or (111)A facets and wires were made in nonquantum regime. The effects of the growth conditions ont he cross-sectional structure and photoluminescence (PL) properties were clarified. Wires grown on (111)A facets showed better structural and PL properties than those on (211)A facets. Insertion of an InGaAs low-temperature (LT) buffer layer was found to greatly improve the band-edge PL, intensity. Under optimum conditions, the wire exhibited an intense PL emission with a narrow peak width at an energy position of InGaAs lattice-matched to InP. A defect-related emission is also observed and discussed.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Fujikura Hajime
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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Fujikura Hajime
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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IWA-ANA Tadayoshi
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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Iwa-ana Tadayoshi
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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