In Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors
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概要
- 論文の詳細を見る
By a rigorous computer analysis of the surface recombination process, it is shown that the surface state distributions on semiconductor free surfaces can be determined from a measurement of the dependence of band-edge photoluminescence intensity on the excitation intensity. The measurement of the Fermi level pinning position in the dark by the surface current transport measurement avoids the possible ambiguity of the interpretation. The new technique is successfully applied to variously treated GaAs surfaces and to passivated InGaAs surfaces with and without the ultrathin Si interface control layer.
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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Saitoh Toshiya
Department Of Electrical Engineering And Research Center For Interface Quantum Electronics Hokkaido
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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IWADATE Hirotake
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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Iwadate Hirotake
Department Of Electrical Engineering And Research Center For Interface Quantum Electronics Hokkaido
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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