GaAs and In_<0.53>Ga_<0.47>As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
A novel compound semiconductor MIS structure using an ultra-thin partially oxidized MBE Si film as a pseudomorphic interface control layer (ICL) is reported for GaAs and InGaAs. As an outer insulator layer, a silicon dioxide or silicon nitride film is deposited in-situ by a low-temperature photo-CVD process using an ArF excimer laser. While the GaAs MIS structure exhibited strong Fermi level pinning, the InGaAs MIS structure showed completely "unpinned" behavior with a very small hysteresis after annealing. The difference is qualitatively explained by a band line-up of the constituent materials.
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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Ohno H
Jaeri-riken Spring-8 Project Team
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Ohno Hideo
Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Ishii H
Sci. Univ. Tokyo Chiba‐ken Jpn
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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ISHII Hirotatsu
Department of Electrical Engineering, Faculty of Engineering Hokkaido University
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AKAZAWA Masamichi
Department of Electrical Engineering, Faculty of Engineering and Research Center for Interface Quant
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Matsuzaki Ken-ichirou
Department Of Electrical Engineering Faculty Of Engineering
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Akazawa M
Hokkaido Univ. Sapporo Jpn
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Akazawa Masamichi
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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