AKAZAWA Masamichi | Department of Electrical Engineering, Faculty of Engineering and Research Center for Interface Quant
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概要
- 同名の論文著者
- Department of Electrical Engineering, Faculty of Engineering and Research Center for Interface Quantの論文著者
関連著者
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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AKAZAWA Masamichi
Department of Electrical Engineering, Faculty of Engineering and Research Center for Interface Quant
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Akazawa Masamichi
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Ishii H
Sci. Univ. Tokyo Chiba‐ken Jpn
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ISHII Hirotatsu
Department of Electrical Engineering, Faculty of Engineering Hokkaido University
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Akazawa M
Hokkaido Univ. Sapporo Jpn
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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Ohno H
Jaeri-riken Spring-8 Project Team
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Ohno Hideo
Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Tomozawa Hidemasa
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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FUJIKURA Hajime
Department of Ophthalmology and Visual Science, Tokyo Medical and Dental University Graduate School
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Fujikura Hajime
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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Matsuzaki Ken-ichirou
Department Of Electrical Engineering Faculty Of Engineering
著作論文
- Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity as GaAs-AlAs Heterointerface Taking Account of Delta-Doping
- Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers
- GaAs and In_Ga_As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE : Surfaces, Interfaces and Films