Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity as GaAs-AlAs Heterointerface Taking Account of Delta-Doping
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概要
- 論文の詳細を見る
X-ray photoelectron spectroscopy reinvestigation is done for the recently reported Si-interlayer-induced change of the valence band discontinuity (?E_v) at GaAs-AlAs interfaces. The XPS measurements reproduced the large apparent change of ?E_v caused by the Si interlayer. However, it also led to anomalous increases of separations between the core level peak and the valence band edge as well as anomalous increases of full width at half maximum of the core level spectra. It is concluded that the observed change of ?E_v is only an apparent one. The anomalies were explained quantitatively by a new model based on the surface Fermi level pinning and interface delta-doping.
- 社団法人応用物理学会の論文
- 1992-08-01
著者
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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Tomozawa Hidemasa
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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FUJIKURA Hajime
Department of Ophthalmology and Visual Science, Tokyo Medical and Dental University Graduate School
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Fujikura Hajime
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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AKAZAWA Masamichi
Department of Electrical Engineering, Faculty of Engineering and Research Center for Interface Quant
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Akazawa Masamichi
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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