Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-02-20
著者
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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IKEDA Eiji
Department of Pathology, School of Medicine, Keio University
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Ohno H
Jaeri-riken Spring-8 Project Team
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Ohno Hideo
Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute
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Ohno Hideo
Department Of Gastroenterology Red Cross Hospital
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Ikeda Eiji
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Ikeda Eiji
Toyota Technological Institute:japan Energy Corporation
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Ikeda E
Research Fellow Of The Japan Society For The Promotion Of Science
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OHTSUKA Shunsuke
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Ohtsuka Shunsuke
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Ohno Hideo
Department Of Chemistry Faculty Of Science Kyoto University
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Ikeda Eiji
Department Of Earth And Planetary Sciences Faculty Of Science Kyushu University
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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