Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers
スポンサーリンク
概要
- 論文の詳細を見る
Removal or control of Fermi level pinning is attempted using an ultrathin molecular beam epitaxy (MBE) Si interface control layer (Si ICL) for insulator-semiconductor (I-S) and metal-semiconductor (M-S) interfaces of GaAs and In-GaAs. For successful removal of Fermi level pinning at the I-S interface, the Si ICL should maintain an ordered pseudomorphic structure. The optimum thickness of the Si ICL is about 10 Å. Formation of such a Si ICL alone does not remove pinning; subsequent deposition of a SiO_2 film is necessary for unpinning. Pinning at the air-exposed surfaces can be removed by combining an HF surface treatment with the Si ICL technique. The Si ICL technique is promising for controlling barrier heights at M-S interfaces.
- 社団法人応用物理学会の論文
- 1991-12-30
著者
-
Ishii H
Sci. Univ. Tokyo Chiba‐ken Jpn
-
Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
-
ISHII Hirotatsu
Department of Electrical Engineering, Faculty of Engineering Hokkaido University
-
AKAZAWA Masamichi
Department of Electrical Engineering, Faculty of Engineering and Research Center for Interface Quant
-
Akazawa M
Hokkaido Univ. Sapporo Jpn
-
Akazawa Masamichi
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
-
Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
関連論文
- Early Mortality Following Intracerebral Infection with Tick-Borne Encephalitis Virus Oshima Strain in a Mouse Model
- Hydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering
- 酸素プラズマ雰囲気中PLD法により堆積された炭素薄膜の評価
- C_7F_を用いたC:F膜の堆積とその評価 : ガス圧依存性および気体混合による効果
- Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method
- 金属薄膜による表面周期構造を利用したTHz波フィルタ(学生研究会/マイクロ波シミュレータ/一般)
- テラヘルツ領域用低損失コプレーナ導波路とそのEBGフィルタへの応用(学生研究会/マイクロ波シミュレータ/一般)
- 単電子回路によるボルツマンマシンデバイス
- Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs
- GaAs(111)B基板上に形成されたAlGaAs/GaAs量子構造のSi界面制御層による表面不活性化(化合物半導体デバイスのプロセス技術)
- C-12-3 機能変更の可能な三次元セルラーニューラルネットワークLSI
- 機能変更の可能な三次元セルラーニューラルネットワーク回路
- C-12-33 νMOSを用いた三次元セルラーニューラルネットワーク回路
- ニューロンMOSを用いた3次元セルラーニューラルネットワーク回路の設計
- ニューロンMOSを用いた3次元セルラーニューラルネットワーク回路の設計
- ニューロンMOSを用いた3次元セルラーニューラルネットワーク回路の設計
- C-12-46 三次元セルラーニューラルネットワーク回路
- Nucleolin and the Packaging Signal, Ψ, Promote the Budding of Human Immunodeficiency Virus Type-1 (HIV-1)
- Meningeal large granular lymphocyte lymphoma
- Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices
- X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces
- Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
- コプレーナ伝送線路を用いたサブテラヘルツ1次元周期構造の評価(テラヘルツ帯応用を開拓する材料・デバイス・システム技術)
- Migration-Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source
- An Outbreak of Histoplasmosis among Healthy Young Japanese Women after Traveling to Southeast Asia
- A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves : Surfaces, Interfaces and Films
- Electronic Properties of a Photochemical Oxide-GaAs Interface
- Hybrid Orbital Energy for Heterojunction Band Lineup
- InP High Mobility Enhancement MISFETs Using Anodically Grown Al_2O_3-Native Oxide/InP Interface : LATE NEWS
- Molecular Beam Epitaxy and Migration-Enhanced Epitaxial Growth of InP Using Polycrystalline InP as Phosphorus Source
- Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
- Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
- Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
- Arプラズマ雰囲気中でのレーザアブレーション炭素薄膜堆積
- レーザアブレーションプルーム(カーボン)の観測
- レーザアブレーション法による炭素薄膜の堆積
- Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
- 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
- Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy
- Free Carrier Profile Synthesis in MOCVD Grown GaAs by 'Atomic-Plane' Doping
- Deep Electron Traps in Undoped GaAs Grown by MOCVD
- n-Si(001)上に形成した極薄絶縁膜/Si界面の超高真空対応非接触C-V法による評価
- n-Si(001)上に形成した極薄絶縁膜/Si界面の超高真空対応非接触C-V法による評価
- Herpes encephalitis and paraneoplastic limbic encephalitis
- 単電子デバイスの準静的動作による断熱的スイッチング(半導体材料・デバイス)
- C-11-2 SOI表面に対する超高真空非接触C-V測定の適用
- QMESFETの提案と試作
- QMESFETの提案と試作
- C-11-8 SOIを用いた絶縁ゲート型MESFETの試作
- 単電子インバータ回路の設計と多値特性の導出
- C-8-2 多種の終端を持つBDDにもとづく磁束転送論理回路
- 量子ホップフィールドネットワークによる最適化問題の求解
- C-12-45 多値信号を利用したカラーペトリネットの回路化
- 量子ホップフィールドネットワークによる最適化問題の求解
- Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram
- Fluorinated Carbon Films with Low Dielectric Constant Made from Novel Fluorocarbon Source Materials by RF Plasma Enhanced Chemical Vapor Deposition
- Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Welts
- Rabies virus dissemination in neural tissues of autopsy cases due to rabies imported into Japan from the Philippines : Immunohistochemistry
- Cross-reactive antigenicity of nucleoproteins of lyssaviruses recognized by a monospecific antirabies virus nucleoprotein antiserum on paraffin sections of formalin-fixed tissues
- Dependencies of Transport and Photoluminescence on Morphology of Vacuum Deposited C_ Films
- Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Comcentratiorn at Very Low Temperature
- Application of Carbonaceous Material for Fabrication of Nano-Wires with a Scanning Electron Microscopy
- Characterization of Deep Levels in Si-Doped In_xAl_As Layers Growrn by Molecular Beam Epitaxy
- Immunohistochemical Localization of Secretory Component(SC) and Carcinoembryonic Antigen(CEA) in Human Gastric Mucosa.
- A Computer Simulation of the Recombination Process at Semiconductor Surfaces
- Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Poly-Si and a-Si: H MOS Photodiodes for Large-Area, High Spatial Resolution Photosensor Arrays : I-2: SILICON SOLAR CELLS (2) : Polycristalline Silicon
- Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity as GaAs-AlAs Heterointerface Taking Account of Delta-Doping
- Neutralizing antibody against severe acute respiratory syndrome (SARS)-coronavirus spike is highly effective for the protection of mice in the murine SARS model
- Covalent bonded Gag multimers in human immunodeficiency virus type-1 particles
- Chiral Recognition of Ru(phen)^_3 by Anionic Cyclodextrins
- Iron-Doped Liquid-Phase-Epitaxial GaAs Layers with Negative Resistance Properties
- Growth of a (GaAs)_n/(InAs)_n Superlattice Semiconductor by Molecular Beam Epitaxy
- Effects of Impurity between Epitaxial Layer and Substrate on Current Transient for GaAs Metal-Semiconductor Field-Effect Transistors
- Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate
- Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics
- Pressure Balancing Structure for Fiber-Optic Flexural Disk Acoustic Sensor
- Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers
- GaAs and In_Ga_As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE : Surfaces, Interfaces and Films
- Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AlGaAs/GaInAs/GaAs Pseudomorphic Structures : Electrical Properties of Condensed Matter
- In Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors
- High Efficiency MOS Solar Cells by Anodic Oxidation Processes : II-1: COMPOUND SEMICONDUCTOR SOLAR CELLS (I)
- Trimethylgallium Supply without the Use of Bubbling in GaAs Growth by Metalorganic Vapor Phase Epitaxy
- In_Ga_As MISFETs Having an Ultrathin MBE Si Interface Control Layer and Photo-CVD SiO_2 Insulator (SOLID STATE DEVICES AND MATERIALS 1)
- A Common Energy Reference for DX Centers and EL2 Levels in III-V Compound Semiconductors
- High-Efficiency GaAs MOS Solar Cells by Anodization in Active Region : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Control of GaAs Schottky Barrier Height by Ultrathin Molecular Beam Epitaxy Si Interface Control Layer
- Polycrystalline and Amorphous Si MOS Solar Cells by Anodization : I-2: SILICON SOLAR CELLS (2) : Polycristalline Silicon
- Amorphous Silicon Schottky and MIS Solar Cells by rf Sputtering and rf Glow Discharge Decomposition
- Multiple-Valued Inverter Using a Single-Electron-Tunneling Circuit (Special Issue on Integrated Electronics and New System Paradigms)
- Eliciting the Potential Functions of Single-Electron Circuits (Special Issue on New Concept Device and Novel Architecture LSIs)
- MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices
- 二分決定グラフにもとづく磁束転送論理回路 : 32ビット加算器の回路設計
- Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers
- Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation
- High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers
- Correlation between the Location of the Interface State Minimum at Insulator-Semiconductor Interfaces and Schottky Barrier Heights
- AlInN/GaN系ヘテロ構造の表面・界面評価 (電子デバイス)
- Non-Destructive Determination of Cr Concentration Distribution in Cr Doped Semi-Insulating GaAs Substrates
- AlInN/GaN系ヘテロ構造の表面・界面評価(半導体プロセス・デバイス(表面,界面,信頼性),一般)