Non-Destructive Determination of Cr Concentration Distribution in Cr Doped Semi-Insulating GaAs Substrates

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概要

• 論文の詳細を見る

• Non-destructive determination of Cr concentration distribution in Cr doped semi-insulating GaAs substrates is described. Substrate conductance change ΔG caused by light illumination, which is known to be correlated with the Cr concentration in the substrate, is determined by the use of a microwave technique. The Cr concentration distribution in semi-insulating GaAs substrates determined by the present method agrees with the tendency expected from the crystal growth condition. The present method would be very useful for ion implantation used in GaAs IC fabrication.

• 社団法人応用物理学会の論文
• 1982-12-20

著者

• Ohno Hideo

  Department Of Chemistry Faculty Of Science Kyoto University

• Hasegawa Hideki

  Department Of Computer Science And Electronics Kyushu Institute Of Technology

• SHIMIZU Haruhito

  Department of Electrical Engineering, Faculty of Engineering, Hokkaido University

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