Immunohistochemical Localization of Secretory Component(SC) and Carcinoembryonic Antigen(CEA) in Human Gastric Mucosa.
スポンサーリンク
概要
著者
-
Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
-
NAGURA Hiroshi
Department of Pathology, Tohoku University Hospital
-
Watanabe Keiichi
Department Of Internal Medicine School Of Medicine Tokai University
-
Asai Toshio
Department of Cardiovascular Pediatrics, Tokyo Womens Medical College, 2nd Hospital
-
Nagura Hiroshi
Department Of Pathology Tohoku University Graduate School Of Medicine
-
Asai Toshio
Department Of Cardiovascular Pediatrics Tokyo Womens Medical College 2nd Hospital
-
Asai Toshio
Department Of Pathology And Cell Biology Research Laboratory Tokai University School Of Medicine
-
Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
-
Nagura Hiroshi
Department Of Neurology Tokyo Metropolitan Geriatric Hospital
-
Nagura Hiroshi
Department Of Pathology And Cell Biology Research Laboratory Tokai University School Of Medicine
-
Watanabe Keiichi
Department Of Pathology And Cell Biology Research Laboratory Tokai University School Of Medicine
-
Watanabe Keiichi
Department Of Applied Biological Science Faculty Of Agriculture Saga University
-
Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
関連論文
- Early Mortality Following Intracerebral Infection with Tick-Borne Encephalitis Virus Oshima Strain in a Mouse Model
- Impact of Lifestyle-Related Diseases on Carotid Arterial Wall Elasticity as Evaluated by an Ultrasonic Phased-Tracking Method in Japanese Subjects
- Evaluation of Plaque Stabilization by Fluvastatin with Carotid Intima-Medial Elasticity Measured by a Transcutaneous Ultrasonic-Based Tissue Characterization System
- PJ-302 High-Resolution Measurement of Carotid Artery Wall Elasticity for Clinical Tailor-Made Risk Management of Arteriosclerosis(Atherosclerosis, clinical-09, The 71st Annual Scientific Meeting of the Japanese Circulation Society)
- Usefulness of measurement of carotid arterial wall elasticity distribution in detection of early-stage atherosclerotic lesions caused by cigarette smoking
- PE-166 Influence of Cardiovascular Risk Factors on Carotid Arterial Elasticity Measured by the Transcutaneous Ultrasonography Using Phased-tracking Method(Atherosclerosis, clinical-7 (H) PE28,Poster Session (English),The 70th Anniversary Annual Scientific
- Imaging of Takayasu Arteritis with the Phased Tracking Method(Echo/Doppler 2 (I), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- PE-421 Early Detection of Vascular Remodeling by Angiotensin II Receptor Blockers with Carotid Arterial Elastic Modulus in Essentail Hypertension(PE071,Echo/Doppler (Peripheral/Vascular) (I),Poster Session (English),The 73rd Annual Scientific Meeting of t
- RF-MBE選択成長法を用いたAlGaN/GaN細線ネットワークの形成(特別セッションテーマ: GaN電子デバイスはどこまで特性を伸ばすのか?, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- 化合物半導体電子デバイス及び関連材料研究の歴史的発展と将来展望(電子デバイス,エレクトロニクスソサイエティ和文論文誌500号記念論文)
- MBE選択成長法によるInP系量子細線ネットワークの高密度集積化(量子効果デバイス及び関連技術)
- 化合物半導体界面におけるバンドアラインメントとフェルミ準位ピンニング
- Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism
- Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure
- Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
- Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism
- ヘキサゴナルBDD単電子論理回路のためのGaAs単電子節点デバイスの検討(量子ナノデバイスと回路応用)
- 低消費電力量子ナノ集積回路のためのショットキーラップゲート制御量子細線および単電子トランジスタのスイッチング特性解析(量子ナノデバイスと回路応用)
- Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits
- ナノメートルショットキーゲートAlGaN/GaN HFETにおける異常ゲートリーク電流とゲート制御性に関する検討(半導体表面・界面制御と電子デバイスの信頼性, 信頼性一般)
- AlGaN/GaNヘテロ構造を用いたPdショットキー型水素ガスセンサ(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- ゲートレス型AlGaN/GaN HEMTを利用した溶液センサ(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- ゲートレス型AlGaN/GaN HEMTを利用した溶液センサ(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- ゲートレス型AlGaN/GaN HEMTを利用した溶液センサ(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- 量子細線ネットワークと論理回路応用
- MBE選択成長法を適用したGaAs BDD量子節点デバイスの作製と評価(量子効果デバイス及び関連技術)
- MBE選択成長法を適用したGaAs BDD量子節点デバイスの作製と評価(量子効果デバイス及び関連技術)
- PE-326 Efficacy of Valsartan on Carotid Arterial Wall Elastic Modulus and Urinary Albumin Excretion in Diabetic Patients(Echo/Doppler(07)(I),Poster Session(English),The 72nd Annual Scientific Meeting of the Japanese Circulation Society)
- Threshold setting for likelihood function for elasticity-based tissue classification of arterial walls by evaluating variance in measurement of radial strain (Special issue: Ultrasonic electronics)
- Tissue structure of arterial wall revealed with elasticity imaging
- P2-54 Tissue Classification of Artery Wall Based on Elasticity Distribution in Region of Interest Determined by Spatial Resolution of Ultrasound(Poster session 2)
- Tissue Classification of Arterial Wall Based on Elasticity Image (Special Issue: Ultrasonic Electronics)
- P2-41 Tissue Classification of Arterial Wall Based on Correlation Between Regional Elasticity Distributions and Elasticity Histograms of Tissues(Short oral presentation for posters)
- P2-59 Construction of Reference Data for Classification of Elasticity Images of Arterial Wall(Short presentation for poster)
- Right Ventricular Systolic Function and the Manner of Transformation of the Right Ventricle in Patients With Dilated Cardiomyopathy
- Evaluating the regional elastic modulus of a cylindrical shell with nonuniform wall thickness
- Effects of Tachycardia on Regional Wall Motion in Acute Ischemic Canine Heart
- OE-249 Effects of changes in Coronary perfusion on Subendocardial contractility Assessed with the novel high-resolution Doppler method(Echo/Doppler 11 (I) : OE31)(Oral Presentation (English))
- Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs
- GaAs(111)B基板上に形成されたAlGaAs/GaAs量子構造のSi界面制御層による表面不活性化(化合物半導体デバイスのプロセス技術)
- Nucleolin and the Packaging Signal, Ψ, Promote the Budding of Human Immunodeficiency Virus Type-1 (HIV-1)
- Meningeal large granular lymphocyte lymphoma
- Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
- Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices
- ヘキサゴナルBDD単電子論理回路のためのGaAs単電子節点デバイスの検討(量子ナノデバイスと回路応用)
- 低消費電力量子ナノ集積回路のためのショットキーラップゲート制御量子細線および単電子トランジスタのスイッチング特性解析(量子ナノデバイスと回路応用)
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process (Special Issue: Solid State Devices & Materials)
- X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces
- ナノメートルショットキーゲートAlGaN/GaN HFETにおける異常ゲートリーク電流とゲート制御性に関する検討(半導体表面・界面制御と電子デバイスの信頼性, 信頼性一般)
- AlGaN/GaNヘテロ構造を用いたPdショットキー型水素ガスセンサ(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
- Migration-Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source
- Large Conductance Modulation in Interdigital Gate HEMT Device due to Surface Plasma Wave Interactions and Its Device Application
- MBE選択成長法によるInP系量子細線ネットワークの高密度集積化(量子効果デバイス及び関連技術)
- A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves : Surfaces, Interfaces and Films
- Electronic Properties of a Photochemical Oxide-GaAs Interface
- Hybrid Orbital Energy for Heterojunction Band Lineup
- InP High Mobility Enhancement MISFETs Using Anodically Grown Al_2O_3-Native Oxide/InP Interface : LATE NEWS
- Molecular Beam Epitaxy and Migration-Enhanced Epitaxial Growth of InP Using Polycrystalline InP as Phosphorus Source
- Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
- Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
- Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
- AlGaN/GaNヘテロ構造を用いたPdショットキー型水素ガスセンサ(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- AlGaN/GaN HFETのサブミクロンゲートにおける横方向トンネル輸送過程(特別セッションテーマ: GaN電子デバイスはどこまで特性を伸ばすのか?, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- RF-MBE選択成長法を用いたAlGaN/GaN細線ネットワークの形成(特別セッションテーマ: GaN電子デバイスはどこまで特性を伸ばすのか?, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- AlGaN/GaN HFETのサブミクロンゲートにおける横方向トンネル輸送過程(特別セッションテーマ: GaN電子デバイスはどこまで特性を伸ばすのか?, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- RF-MBE選択成長法を用いたAlGaN/GaN細線ネットワークの形成(特別セッションテーマ: GaN電子デバイスはどこまで特性を伸ばすのか?, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- AlGaN/GaN HFETのサブミクロンゲートにおける横方向トンネル輸送過程(特別セッションテーマ: GaN電子デバイスはどこまで特性を伸ばすのか?, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
- ヘキサゴナルBDD量子集積回路のための量子細線スイッチの特性(量子効果デバイス及び関連技術)
- ヘキサゴナルBDD量子集積回路のための量子細線スイッチの特性(量子効果デバイス及び関連技術)
- Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy
- Free Carrier Profile Synthesis in MOCVD Grown GaAs by 'Atomic-Plane' Doping
- Deep Electron Traps in Undoped GaAs Grown by MOCVD
- 窒化物電子デバイスにおけるショットキー界面および絶縁体界面の制御(電子デバイスの信頼性と半導体表面・界面制御・評価)
- 窒化物電子デバイスにおけるショットキー界面および絶縁体界面の制御(電子デバイスの信頼性と半導体表面・界面制御・評価)
- GaN系電子デバイスにおける表面の影響(化合物半導体IC及び超高速・超高周波デバイス)
- GaN系電子デバイスにおける表面の影響(化合物半導体IC及び超高速・超高周波デバイス)
- Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs
- (111)B加工基板上へのMBE選択成長によるGaAsヘキサゴナル量子細線ネットワークの形成(量子効果デバイス及び関連技術)
- (111)B加工基板上へのMBE選択成長によるGaAsヘキサゴナル量子細線ネットワークの形成(量子効果デバイス及び関連技術)
- Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy
- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits
- Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates
- Investigation of Side-gating Effects in GaAs-based Quantum Wire Transistor (QWRTr) utilizing Nanosized Schottky Gates
- Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation
- Cross-Sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates
- Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted Selective MBE on Pre-Patterned Substrates
- Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy
- ヘキサゴナルBDD量子論理回路をベースにした超低消費電力ナノプロセッサの実装(量子効果デバイス及び関連技術)
- ヘキサゴナルBDD量子論理回路をベースにした超低消費電力ナノプロセッサの実装(量子効果デバイス及び関連技術)
- Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors
- Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
- Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model
- Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model
- Leakage mechanism in GaN and AlGaN Schottky interfaces
- Herpes encephalitis and paraneoplastic limbic encephalitis
- Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram
- Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Welts
- Rabies virus dissemination in neural tissues of autopsy cases due to rabies imported into Japan from the Philippines : Immunohistochemistry