Effects of Impurity between Epitaxial Layer and Substrate on Current Transient for GaAs Metal-Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-01-15
著者
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Tanaka S
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Tanaka S
Toshiba Corp. Kawasaki Jpn
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Ishii H
Sci. Univ. Tokyo Chiba‐ken Jpn
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Tanaka Shun-ichi
Department of Applied Physics, Faculty of Engineering, The University of Tokyo
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Tanaka Shuichi
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Tanaka S
Atr Media Integration And Communications Research Laboratories
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ISHII Hirotatsu
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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Ishii Hirotatsu
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Tanaka Seiichi
ATR Media Integration and Communications Research Laboratories
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