Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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土屋 敏章
島根大学 総合理工学部
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Sato Yasuhiko
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Tsuchiya T
Department Of Electronics Doshisha University
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Sato Y
Nagaoka Univ. Technol. Nagaoka Jpn
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Sato Yuzuru
Seiko Epson Corp. Research And Development Div.
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Sato Y
Department Of Metallurgy Graduate School Of Engineering Tohoku University
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Kosugi Toshihiko
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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Sato Y
Ntt Microsystem Integration Laboratories
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SATO Yasuhiro
NTT System Electronics Laboratories
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KOSUGI Toshihiko
NTT Wireless System Laboratories
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TSUCHIYA Toshiaki
Department of Electronic and Control Systems Engineering
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ISHII Hiromu
NTT System Electronics Laboratories
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Ishii H
Sci. Univ. Tokyo Chiba‐ken Jpn
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