2.5 Inch Flat-Type Phase-Change Optical Disk Drive
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-11-30
著者
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Tsuboi Nozomu
Faculty Of Engineering Niigata University
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Tsuboi Nozomu
Department Of Electrical Engineering Nagaoka University Of Technology:(present Address)department Of
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Sato Yasuhiko
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Sato Y
Nagaoka Univ. Technol. Nagaoka Jpn
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Sato Yuzuru
Seiko Epson Corp. Research And Development Div.
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Sato Y
Department Of Metallurgy Graduate School Of Engineering Tohoku University
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Sugita Tatsuya
Hitachi Research Laboratory Hitachi Ltd.
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Minemura H
Hitachi Ltd. Tokyo Jpn
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ANDOH Hisashi
Hitachi Research Laboratory, Hitachi, Ltd.
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SATO Yoshio
Hitachi Research Laboratory, Hitachi, Ltd.
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MINEMURA Hiroyuki
Hitachi Research Laboratory, Hitachi,Ltd.
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KUGIYA Fumio
Central Research Laboratory, Hitachi Ltd.
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Sato Y
Ntt Microsystem Integration Laboratories
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Andoh H
Hitachi Research Laboratory Hitachi Ltd.
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Andoh Hisashi
Hitachi Research Laboratory Hitachi Ltd.
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TSUBOI Nobuyoshi
Hitachi Research Laboratory, Hitachi, Ltd.
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FUSHIMI Tetsuya
Hitachi Research Laboratory, Hitachi, Ltd.
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YASUKAWA Saburoh
Hitachi Research Laboratory, Hitachi, Ltd.
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MUTO Nobuyoshi
Hitachi Research Laboratory, Hitachi, Ltd.
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TUNODA Yoshito
Hitachi Research Laboratory, Hitachi, Ltd.
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Kugiya Fumio
Central Research Laboratory Hitachi Ltd.
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Tsuboi N
Faculty Of Engineering Niigata University
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Muto Nobuyoshi
Hitachi Research Laboratory Hitachi Ltd.
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Tsunoda Y
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Fushimi Tetsuya
Hitachi Research Laboratory Hitachi Ltd.
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Yasukawa Saburoh
Hitachi Research Laboratory Hitachi Ltd.
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Minemura Hiroyuki
Hitachi Central Laboratory Hitachi Ltd.
関連論文
- Femtosecond Optical Pulse Compressor Using CS_2 Liquid-Core Fiber with Negative Delayed Nonlinear Response
- Study on Ultrafast Dynamic Behaviors of Different Nonlinear Refractive Index Components in CS_2 Using a Femtosecond Interferometer
- Substrate Dependence of Laser-Induced Damage Threshold of Scandium Oxide High-Reflector Coatings for UV Pulsed Laser
- Influence of Deposition Parameters on Laser Damage Threshold of 355-nm Scandium Oxide-Magnesium Fluoride High-Reflector Coatings
- Crystal Structure and Optical Properties of Defect-Chalcopyrite-Type MnGa_2S_4
- Helical Pitches and Tilt Angles in Room Temperature Ferroelectric Chiral Smectic C Liquid Crystals, MORA n and MBRA n
- Magnetic Field Effects on Preparing Thin Homogeneous Ferroelectric Smectic Cells for Electro-Optical Microsecond Switches
- Anomalous Electric Field Dependence of Helical Pitches in Ferroelectric Sm C : at Temperatures Close to the Phase Transition to Sm A
- Composition and Structure Control of Cu-Al-O Films Prepared by Reactive Sputtering and Annealing
- Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
- Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
- Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
- Determination of Dielectric Relaxation Time of Langmuir-Films by a Whole-Curve Method Using the Maxwell Displacement Current
- Determination of the Piezoelectric Coefficient of Monolayers on Water Surface by Maxwell-Displacement-Current Measurement
- Dielectric Relaxation Phenomena of a Liquid Crystal Monolayer at the Air-Water Interface
- Ordering and Orientation of Epitaxial CuInS_2 Films Grown on GaP(001) by Three-Source Evaporation
- Effects of Annealing on Chemical Composition, Crystallinity, Optical Transmission and Electrical Conductivity of ZnO Thin Films Prepared on Glass Substrates by Chemical Bath Deposition
- Growth of CuInS_2 Epitaxial Films on Si(001) by Multisource Evaporation Method
- Luminescence Properties of Delafossite-Type CuYO_2 Doped with Calcium, Oxygen or Rare Earth Tb
- Measurements of Impurity Diffusion Coefficients in Ionic Melts with High Accuracy under Microgravity (特集 MSL-1(3))
- Improvement in Layer Quality of CuGaS_2 Grown by Vapor Phase Epitaxy with Metal Chlorides and H_2S Sources
- Growth of CuInS_2 and CuIn_5S_8 on Si(001) by the Multisource Evaporation Method
- Optical Properties of Ag (Al_xGa_)S_2 Epitaxial Layers Grown on GaAs (100) by Multisource Evaporation
- Preparation and Properties of Ag(Al_xGa_)S_2 Crystals by Iodine Transport Method
- Effect of Lattice Strain on Exciton Energy of AgGaS_2 Epitaxial Layers on GaAs (100)
- Lattice Strain in AgGaS_2 Epitaxial Layers Grown on GaAs (100) by Multisource Evaporation
- Dependence of Energy Gap on x in CuAl_xGa_S_2 Mixed Crystal System : Semiconductors and Semiconductor Devices
- Absorption Edge Studies of CuGaS_2 Single Crystal
- A New Stacked-Mask Process Utilizing Spun-on Carbon Film for Sub-130-nm Etching
- Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
- Raman Scattering and Two-Phonon Infrared Transmission Spectra of Cu(Al_xGa_)S_2 Crystals
- Vapor-Phase Atomic Layer Epitaxy of CuGaS_2 at Atmospheric Pressure Using Metal Chlorides and H_2S
- Optical and Electrical Characterization of CuGaS_2 Grown by Vapor Phase Epitaxy
- Deep Region Emissions of CuGaS_2 Crystals
- Resonant Raman Scattering and Excitonic Polariton States in CuGaS_2
- Single-Beam Overwrite with a New Erase Mode of In_3 SbTe_2 Phase-Change Optical Disks : Media
- Single-Beam Overwrite with a New Erase Mode of In_3SbTe_2 Phase-Change Optical Disks
- Disk Structure for High Performance Overwritable Phase-Change Optical Disks : PHASE CHANGE MEDIA I
- Observation of Magnetization Structure on Co-Cr Perpendicular Magnetic Recording Media by Bitter and Electron Holography Methods
- Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field-Effect Transistors
- Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits
- Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
- 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
- Properties of Full-Color Fluorescent Display Devices Excited by a UV Light-Emitting Diode
- Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode
- Crystallizing Mechanism and Recording Properties of In_3SbTe_2 Phase-Change Optical Disks
- Brillouin Spectra and Structural Relaxation in ZnCl_2-KCl Binary Melts
- 2.5 Inch Flat-Type Phase-Change Optical Disk Drive
- Acoustic Properties of Plastics for Applications to Probes of an Ultrasonic Diagnostic Instrument : Photoacoustic Spectroscopy and Ultrasonic Imaging
- Precise Mark Shape Control in Mark Length Recording on Magnetooptical Disk
- Read Channel and Format for High-Density Magneto-Optical Disk System
- High Quality Ferroelectric Liquid Crystal Display with Quasi-Bookshelf Layer Structure
- Application of Electron Beam Cured Spin-On Glass to Trilevel Resist System for Deep and Vacuum Ultraviolet Lithography
- Characterization of CuAlO2 Thin Films Prepared on Sapphire Substrates by Reactive Sputtering and Annealing
- Composition and Structure Control of Cu–Al–O Films Prepared by Reactive Sputtering and Annealing
- Ballistic Spin Transport in Four-Terminal NiFe/In_Ga_As Structure : Semiconductors
- Preparation of Delafossite-Type CuYO2 Films by Solution Method
- Order-Disorder Transition in Sputter-Deposited Silver-Zinc Alloy Films
- Thermo-Photometric Study on Phase Transitions in Sputter-Deposited Ag-Zn Alloy Thin Films
- Organic Light-Emitting Diodes with a Nanostructured Fullerene Layer at the Interface between Alq3 and TPD Layers
- Luminescence Properties of Delafossite-Type CuYO2 Doped with Calcium, Oxygen or Rare Earth Tb
- Ordering and Orientation of Epitaxial CuInS2 Films Grown on GaP(001) by Three-Source Evaporation
- Epitaxial Growth of Chalcopyrite-Type CuInS2 Films on GaAs(001) Substrates by Evaporation Method with Elemental Sources
- Growth of CuInS2 and CuIn5S8 on Si(001) by the Multisource Evaporation Method
- Growth of CuInS2 Epitaxial Films on Si(001) by Multisource Evaporation Method
- Emission Light and Multiple Surface Plasmon Excitations at Prism/Ag/Merocyanine Langmuir-Blodgett Films
- Effects of Annealing on Chemical Composition, Crystallinity, Optical Transmission and Electrical Conductivity of ZnO Thin Films Prepared on Glass Substrates by Chemical Bath Deposition