Vapor-Phase Atomic Layer Epitaxy of CuGaS_2 at Atmospheric Pressure Using Metal Chlorides and H_2S
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-02-15
著者
-
Tsuboi Nozomu
Faculty Of Engineering Niigata University
-
Tsuboi Nozomu
Department Of Electrical Engineering Nagaoka University Of Technology:(present Address)department Of
-
Tsuboi Nozomu
Nagaoka University Of Technology
-
IIDA Seishi
Nagaoka University of Technology
-
Iida S
Nagaoka Univ. Technol. Nagaoka Jpn
-
Iida S
Toyama Univ. Toyama Jpn
-
Iida Shinya
Speedfam Co. Ltd.
-
ISU Takehiro
Nagaoka University of Technology
-
KAKUDA Noritoshi
Nagaoka University of Technology
-
TERASAKO Tomoaki
Nagaoka University of Technology
-
Iida Seishi
Nagaoka Univerity Of Technology Kamitomioka
-
Tsuboi N
Faculty Of Engineering Niigata University
-
Terasako Tomoaki
Faculty of Engineering, Ehime University
-
Terasako T
Faculty Of Engineering Ehime University
関連論文
- Crystal Structure and Optical Properties of Defect-Chalcopyrite-Type MnGa_2S_4
- Thermally Stimulated Processes in Y_2O_3 : Eu^ Whiskers Fabricated by Chemical Vapor Deposition
- Luminescence Properties of Y_2O_3 : Tm^ Whiskers Produced by Chemical Vapor Deposition
- Composition and Structure Control of Cu-Al-O Films Prepared by Reactive Sputtering and Annealing
- A Possibility of Application of Photo-Etching of a-C:H Films to Relief Holograms : FUTURE TECHNOLOGY
- Ordering and Orientation of Epitaxial CuInS_2 Films Grown on GaP(001) by Three-Source Evaporation
- Effects of Annealing on Chemical Composition, Crystallinity, Optical Transmission and Electrical Conductivity of ZnO Thin Films Prepared on Glass Substrates by Chemical Bath Deposition
- Growth of CuInS_2 Epitaxial Films on Si(001) by Multisource Evaporation Method
- Luminescence Properties of Delafossite-Type CuYO_2 Doped with Calcium, Oxygen or Rare Earth Tb
- Improvement in Layer Quality of CuGaS_2 Grown by Vapor Phase Epitaxy with Metal Chlorides and H_2S Sources
- Growth of CuInS_2 and CuIn_5S_8 on Si(001) by the Multisource Evaporation Method
- Optical Properties of Ag (Al_xGa_)S_2 Epitaxial Layers Grown on GaAs (100) by Multisource Evaporation
- Preparation and Properties of Ag(Al_xGa_)S_2 Crystals by Iodine Transport Method
- Effect of Lattice Strain on Exciton Energy of AgGaS_2 Epitaxial Layers on GaAs (100)
- Lattice Strain in AgGaS_2 Epitaxial Layers Grown on GaAs (100) by Multisource Evaporation
- Dependence of Energy Gap on x in CuAl_xGa_S_2 Mixed Crystal System : Semiconductors and Semiconductor Devices
- Absorption Edge Studies of CuGaS_2 Single Crystal
- Observation of Laser Oscillation from CaGa_2S_4:Eu^2+
- Raman Scattering and Two-Phonon Infrared Transmission Spectra of Cu(Al_xGa_)S_2 Crystals
- Vapor-Phase Atomic Layer Epitaxy of CuGaS_2 at Atmospheric Pressure Using Metal Chlorides and H_2S
- Optical and Electrical Characterization of CuGaS_2 Grown by Vapor Phase Epitaxy
- Deep Region Emissions of CuGaS_2 Crystals
- Resonant Raman Scattering and Excitonic Polariton States in CuGaS_2
- Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography
- Mierodefects in an As-Grown Czoehralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation
- Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography
- Numerically Simulated and Experimentally Obtained X-Ray Section Topographs of a Spherical Strain Field in a Floating Zone Silicon Crystal
- Synchrotron Radiation Section Topography with Extremely High-Order Reflection and Its Application to the Characterization of MCZ-Silicon Crystals
- Measurement and Analysis of the Static Debye-Waller Factor of Cz-Silicon with Small Oxygen Precipitates : Techniques, Instrumentations and Measurement
- Measurement of the Static Debye-Waller Factor of Silicon Crystals by the Pendellosung Fringe Method
- Luminescence Properties of ZnO Whiskers Obtained by Chemical Vapor Deposition
- 2.5 Inch Flat-Type Phase-Change Optical Disk Drive
- Submicron Particles Observed during Etching Process
- Photoacoustic Spectra of CuInSe_2 Thin Films Prepared by Chemical Spray Pyrolysis
- Decay Characteristics of Photoluminescence Lines in CuGaS_2 Crystals
- Metalorganic Molecular Beam Epitaxy of CuInSe_2 on GaAs Substrate
- Numerically Controlled Dry Etching Technology for Flattening of Si Wafer which Employs SF_6/H_2 Downstream Plasma
- Effect of Ce Co-Doping on CaGa_2S_4:Eu Phosphor : II. Thermoluminescence
- Effect of Ce Co-Doping on CaGa_2S_4:Eu Phosphor : I. Energy Transfer from Ce to Eu Ions
- Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma
- Role of Zn Impurities in CuGaS_2 at Relatively Low Concentrations Revealed by Photoluminescence Measurements
- Photoluminescence Properties of Sn-Related Donor State in Al_xGa_As
- Absorption and Photoluminescence Spectra of Heavily Zn-Doped CuGaS_2 Crystals
- P-Type Conduction in ZnS Grown by Vapor Phase Epitaxy
- Zeeman Effect of Shallow Bound Exciton Lines in CuGaS2
- Characterization of CuAlO2 Thin Films Prepared on Sapphire Substrates by Reactive Sputtering and Annealing
- Composition and Structure Control of Cu–Al–O Films Prepared by Reactive Sputtering and Annealing
- Preparation of Delafossite-Type CuYO2 Films by Solution Method
- Organic Light-Emitting Diodes with a Nanostructured Fullerene Layer at the Interface between Alq3 and TPD Layers
- Luminescence Properties of Delafossite-Type CuYO2 Doped with Calcium, Oxygen or Rare Earth Tb
- Ordering and Orientation of Epitaxial CuInS2 Films Grown on GaP(001) by Three-Source Evaporation
- Epitaxial Growth of Chalcopyrite-Type CuInS2 Films on GaAs(001) Substrates by Evaporation Method with Elemental Sources
- Growth of CuInS2 and CuIn5S8 on Si(001) by the Multisource Evaporation Method
- Growth of CuInS2 Epitaxial Films on Si(001) by Multisource Evaporation Method
- Emission Light and Multiple Surface Plasmon Excitations at Prism/Ag/Merocyanine Langmuir-Blodgett Films
- Luminescence Properties of Y2O3:Tm3+ Whiskers Produced by Chemical Vapor Deposition
- Luminescence Properties of ZnO Whiskers Obtained by Chemical Vapor Deposition
- Thermally Stimulated Processes in Y2O3:Eu3+ Whiskers Fabricated by Chemical Vapor Deposition
- Effects of Annealing on Chemical Composition, Crystallinity, Optical Transmission and Electrical Conductivity of ZnO Thin Films Prepared on Glass Substrates by Chemical Bath Deposition