P-Type Conduction in ZnS Grown by Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
Low-resistivity p-type ZnS layers have been grown on GaAs substrates by vapor-phase epitaxy from a Zn-added ZnS powder source, using an open tube system under a NH_3-added hydrogen flow. The simultaneous addition of NH_3 and Zn has been shown to be essential for the appearance of p-type conduction. The room temperature Hall-effect measurement of a grown layer revealed the hole concentration to be 6 × 10^<18> cm^<-3> and the mobility to be 40 cm^2/(V・s). The p-ZnS/n-GaAs heterojunction showed good rectifying behavior and exhibited an infrared emission, having a peak photon energy corresponding to the band gap energy of GaAs under forward bias.
- 社団法人応用物理学会の論文
- 1989-04-20
著者
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IIDA Seishi
Nagaoka University of Technology
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Iida Seishi
Nagaoka Univerity Of Technology Kamitomioka
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YATABE Toshie
Nagaoka University of Technology
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KINTO Hitoshi
Nagaoka University of Technology
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Yatabe T
National Inst. Materials And Chemical Res. Tsukuba Jpn
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