Iida Seishi | Nagaoka Univerity Of Technology Kamitomioka
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概要
関連著者
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Iida Seishi
Nagaoka Univerity Of Technology Kamitomioka
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IIDA Seishi
Nagaoka University of Technology
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Iida S
Nagaoka Univ. Technol. Nagaoka Jpn
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Iida S
Toyama Univ. Toyama Jpn
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Iida Shinya
Speedfam Co. Ltd.
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Tsuboi Nozomu
Nagaoka University Of Technology
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NAJAFOV Hikmat
Nagaoka University of Technology
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Tsuboi Nozomu
Faculty Of Engineering Niigata University
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Tsuboi Nozomu
Department Of Electrical Engineering Nagaoka University Of Technology:(present Address)department Of
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Tsuboi N
Faculty Of Engineering Niigata University
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Saitoh Hidetoshi
Nagaoka University Of Technology
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OHSHIO Shigeo
Nagaoka University of Technology
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NAJAFOV Hikmat
Department of Chemistry, Nagaoka University of Technology
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KATO Ariyuki
Nagaoka University of Technology
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SATO Yuko
Nagaoka University of Technology
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Toyota H
Nagaoka Univ. Technol. Nagaoka Jpn
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ISU Takehiro
Nagaoka University of Technology
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TERASAKO Tomoaki
Nagaoka University of Technology
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UCHIKI Hisao
Nagaoka University of Technology
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Ooe Akihiro
Nagaoka University Of Technology:university Of Electro-communications
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Terasako Tomoaki
Faculty of Engineering, Ehime University
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TOYOTA Hideyuki
Nagaoka University of Technology
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IWAI Kazutoshi
Nagaoka University of Technology
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BAYRAMOV Ayaz
Nagaoka University of Technology
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Terasako T
Faculty Of Engineering Ehime University
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OOE Akihiro
Nagaoka University of Technology:(Present address)The University of Electro-Communications
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Saitoh Hidetoshi
Nagaoka University of Technology, Nagaoka 940-2188, Japan
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FUKUDA Tsuguo
Institute for Materials Research, Tohoku University
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Mamedov Nazim
Institute Of Physics Azerbaijan Academy Of Sciences
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Irie Makoto
Nagaoka Univerity Of Technology Kamitomioka
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KOUZU Noriyuki
Nagaoka Univerity of Technology Kamitomioka
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KURAMOCHI Yoshimi
Nagaoka Univerity of Technology Kamitomioka
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SAKUDA Kyohei
Nagaoka Univerity of Technology Kamitomioka
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ANDO Yoshihide
Nagaoka University of Technology
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SAWADA Masayuki
Nagaoka University of Technology
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MATSUMOTO Tamao
Nagaoka University of Technology
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AN Gyejong
Nagaoka University of Technology
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MARUYAMA Yosuke
Nagaoka University of Technology
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BAIRAMOV Ayaz
Institute of Physics, Azerbaijan Academy of Sciences
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TAGIEV B.G.
Institute of Physics, Azerbaijan Academy of Sciences
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TAGIEV 0.B.
Institute of Physics, Azerbaijan Academy of Sciences
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DZHABBAROV R.B.
Nagaoka University of Technology
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KAKUDA Noritoshi
Nagaoka University of Technology
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MOROHASHI Makoto
Nagaoka College of Technology
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ANDO Yohihide
Nagaoka University of Technology
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OKAMOTO Shoichi
Nagaoka College of Technology
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ISHIKAWA Hideyuki
Nagaoka University of Technology
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Bairamov Ayaz
Institute Of Physics Azerbaijan Academy Of Sciences
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FUKADA Yusuke
Nagaoka University of Technology
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Tagiev B.g.
Institute Of Physics Azerbaijan Academy Of Sciences
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Tagiev 0.b.
Institute Of Physics Azerbaijan Academy Of Sciences
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Ooe A
Nagaoka Univ. Technology Nagaoka
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Sawada M
Nagaoka University Of Technology
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Matsumoto-aoki Tamao
Nagaoka University Of Technology
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KANG Junyong
Institute for Materials Research, Tohoku University
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HUANG Qisheng
Department of Physics, Xiamen University
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YATABE Toshie
Nagaoka University of Technology
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KINTO Hitoshi
Nagaoka University of Technology
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Huang Q
Inst. Physics Chinese Acad. Sci. Beijing Chn
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Okamoto S
Univ. Tsukuba Ibaraki Jpn
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Shimojo Takahiro
Nagaoka University of Technology, Nagaoka 940-2188, Japan
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Kumakura Hiromichi
Nagaoka University of Technology, Nagaoka 940-2188, Japan
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Fukuda Tsuguo
Institute For Material Research Tohoku University
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Yatabe T
National Inst. Materials And Chemical Res. Tsukuba Jpn
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Uchiki H
Nagaoka Univ. Technol. Nagaoka Jpn
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KANG Junyong
Department of Physics, Xiamen University
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Kumakura Hiromichi
Nagaoka University Of Technology
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Kang J
Samsung Advanced Inst. Technol. Suwon Kor
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Shimojo Takahiro
Nagaoka University Of Technology
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Ohshio Shigeo
Nagaoka University of Technology, Nagaoka 940-2188, Japan
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Najafov Hikmat
Nagaoka University of Technology, Nagaoka 940-2188, Japan
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Iida Seishi
Nagaoka University of Technology, Nagaoka 940-2188, Japan
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Fukada Yusuke
Nagaoka University of Technology, Nagaoka 940-2188, Japan
著作論文
- A Possibility of Application of Photo-Etching of a-C:H Films to Relief Holograms : FUTURE TECHNOLOGY
- Improvement in Layer Quality of CuGaS_2 Grown by Vapor Phase Epitaxy with Metal Chlorides and H_2S Sources
- Observation of Laser Oscillation from CaGa_2S_4:Eu^2+
- Vapor-Phase Atomic Layer Epitaxy of CuGaS_2 at Atmospheric Pressure Using Metal Chlorides and H_2S
- Optical and Electrical Characterization of CuGaS_2 Grown by Vapor Phase Epitaxy
- Resonant Raman Scattering and Excitonic Polariton States in CuGaS_2
- Effect of Ce Co-Doping on CaGa_2S_4:Eu Phosphor : II. Thermoluminescence
- Effect of Ce Co-Doping on CaGa_2S_4:Eu Phosphor : I. Energy Transfer from Ce to Eu Ions
- Role of Zn Impurities in CuGaS_2 at Relatively Low Concentrations Revealed by Photoluminescence Measurements
- Photoluminescence Properties of Sn-Related Donor State in Al_xGa_As
- Absorption and Photoluminescence Spectra of Heavily Zn-Doped CuGaS_2 Crystals
- P-Type Conduction in ZnS Grown by Vapor Phase Epitaxy
- Zeeman Effect of Shallow Bound Exciton Lines in CuGaS2
- Luminescence Properties of Y2O3:Tm3+ Whiskers Produced by Chemical Vapor Deposition
- Luminescence Properties of ZnO Whiskers Obtained by Chemical Vapor Deposition
- Thermally Stimulated Processes in Y2O3:Eu3+ Whiskers Fabricated by Chemical Vapor Deposition