Photoluminescence Properties of Sn-Related Donor State in Al_xGa_<1-x>As
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概要
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We have investigated the near-gap recombinations in Sn-doped Al_xGa_<1-x>As by photoluminescence. By analyzing the variations of spectral lineshapes under various excitation intensities, only one type of recombination was assigned to associate with the Sn-related donor state, which was different from the hydrogenlike shallow donor states and the DX centers. Phonon replicas were observed to accompany the recombination in the samples with high AlAs mole fractions of direct gaps, as well as in those of indirect gaps. The Franck-Condom shift and the phonon energy of the recombination were found to increase with increasing AlAs mole fraction. This behavior was explained in terms of a variation of local lattice distortion around an ionized Sn-related donor and a weighted average of two local vibrational mode frequencies of the Sn-related donor.
- 社団法人応用物理学会の論文
- 1993-08-15
著者
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FUKUDA Tsuguo
Institute for Materials Research, Tohoku University
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IIDA Seishi
Nagaoka University of Technology
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Iida Seishi
Nagaoka Univerity Of Technology Kamitomioka
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KANG Junyong
Institute for Materials Research, Tohoku University
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HUANG Qisheng
Department of Physics, Xiamen University
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Huang Q
Inst. Physics Chinese Acad. Sci. Beijing Chn
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Fukuda Tsuguo
Institute For Material Research Tohoku University
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KANG Junyong
Department of Physics, Xiamen University
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Kang J
Samsung Advanced Inst. Technol. Suwon Kor
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