Thermal Stress Analyses of Bulk Single Crystals during Czochralski Growth : Anisotropic Effects in Various Single Crystals
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概要
- 論文の詳細を見る
Thermal stress analyses of Si, GaAs and InP bulk single crystals during Czochralski growth are performed for the cases of the [001] and [111] pulling directions, using a three-dimensional finite element program. Elastic anisotropy is taken into account in this program. The stress components obtained from thermal stress analysis are converted into the parameter σ_<tot> which represents the effective stress for glide strains. The values and distribution patterns of σ_<tot> obtained in the anisotropic analysis taking account of elastic anisotropy are compared with those obtained in the isotropic analysis using Young's modulus and Poisson's ratio in the {111} plane.
- 一般社団法人日本機械学会の論文
- 1994-04-15
著者
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FUKUDA Tsuguo
Institute for Materials Research, Tohoku University
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Miyazaki Noriyuki
Faculty Of Engineering Kyushu University
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Uchida Hitoshi
Faculty of engineering, Kyushu University
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Munakata Tsuyoshi
Faculty of engineering, Kyushu University
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Munakata Tsuyoshi
Faculty Of Engineering Kyushu University
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Fukuda Tsuguo
Institute For Material Research Tohoku University
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Uchida Hitoshi
Faculty Of Engineering Kyushu University
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