Crystal Growth of Huntite-Borates Doped with Li^+, Si^<4+>, Ge^<4+>, Ti^<4+>, V^<5+>, Cr^<3+>, Mu^<4+> and Nd^<3+> from Highly Concentrated Molten Fluxes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-15
著者
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FUKUDA Tsuguo
Institute for Materials Research, Tohoku University
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Fukuda T
Waseda Univ. Tokyo Jpn
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SHIMAMURA Kiyoshi
Institute for Materials Research, Tohoku University
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Shimamura Kiyoshi
Department Of Engineering Mechanics Chongqing University
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Shimamura Kiyoshi
Institute For Materials Research Tohoku University
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Chani Valery
Institute for Materials Research, Tohoku University
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INOUE Keiji
Institute for Materials Research, Tohoku University
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Chani Valery
Institute For Materials Research Tohoku University:general Physics Institute
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Chani Valery
Institute For Materials Research Tohoku University
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Shimamura Kiyoshi
Kagami Memorial Laboratory For Materials Science And Technology Waseda University
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Fukuda Tsuguo
Institute For Material Research Tohoku University
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Shimamura Kiyoshi
Department of Engineering Mechanics, Chongqing University
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