Epitaxial Growth of Er^<3+> -Doped CaF_2 by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-04-01
著者
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Kasuya Atsuo
Center for Interdisciplinary Research, Tohoku University
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FUKUDA Tsuguo
Institute for Materials Research, Tohoku University
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TANIUCHI Tetsuo
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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Kasuya A
Center For Interdisciplinary Research Tohoku University
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Kasuya Atsuo
Institute Of Materials Resesrch Tohoku University
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Fukuda T
Gunma Univ. Gunma Jpn
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UDA Satoshi
Institute for Materials Research, Tohoku University
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ADACHI Kazunori
Institute for Materials Research, Tohoku University
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YAO Takafumi
Institute for Materials Research, Tohoku University
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MILES Richard
Institute for Materials Research, Tohoku University
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Yao Takafumi
Institute For Materials Research Tohoku University
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Taniguchi T
Institute For Materials Research Tohoku University
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Kasuya Atsuo
Institute For Iron Steel And Other Metals Tohoku University
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Taniguchi T
Japan Radio Co. Ltd.
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Taniuchi T
Tohoku Univ. Sendai Jpn
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Taniuchi Tetsuo
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Uda S
Electronics Device R&d Center Mitsubishi Materials Corporation
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Uda Satoshi
Institute For Materials Research Tohoku University
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Adachi K
Central Res. Inst. Electric Power Ind. Kanagawa Jpn
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Miles Richard
Institute For Materials Research Tohoku University
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Fukuda Tsuguo
Institute For Material Research Tohoku University
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Uda Satoshi
Electrnics Device R&d Center Mitsubishi Material Co. Ltd.
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Yao Takafumi
Institute For Interdisciplinary Research Tohoku University
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Uda Satoshi
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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TANIUCHI Tetsuo
Institute for Materials Research, Tohoku University
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