Resonant Electronic Raman Scattering and Electronic Structures of Bound Exciton Complex in ZnSe

スポンサーリンク

概要

• 論文の詳細を見る

• Electronic Raman scattering of shallow donors in cubic ZnSe has been studied forthe incident photon energy in the vicinity of the n=2 free exciton level. Ramanscattering intensities for Is-+2s and Is-+2p excitations of donor electrons areresonantly enhanced as the photon energy coincides with the excited states of exciton-neutral donor complex. Since these excited states are located within the continuousdispersion of free exciton state, the large enhancement in the Raman scatteringintensity has been attributed to the mixing of these excited states with the free excitonstate. The resonant behavior of the electronic Raman scattering shows that theseexcited states correspond to the lowest lying electronic excited states of the excitonneutral donor complex.

• 社団法人日本物理学会の論文
• 1982-03-15

著者

• Kasuya Atsuo

  Center for Interdisciplinary Research, Tohoku University

• Kasuya A

  Center For Interdisciplinary Research Tohoku University

• Kasuya Atsuo

  Institute Of Materials Resesrch Tohoku University

• NISHINA Yuichiro

  The Research Institute for Iron,Steel and Other Metals,Tohoku University

• Kasuya Atsuo

  The Research Institute For Iron Steel And Other Metals Tohoku University

• Nishina Yuichiro

  The Research Institute For Iron Steel And Other Metals

• GOTO Takenari

  Institute of Materials Science,University of Tsukuba

• Goto Takenari

  Institute Of Materials Science University Of Tsukuba

関連論文

• Direct Silica-Coating of Quantum Dots
• 23aYF-5 集合状態における単層カーボンナノチューブの電子構造のSTM/STSによる解析
• 26a-M-7 ナノチューブの共鳴ラマン散乱
• 31p-YX-9 ナノチューブの共鳴ラマン散乱
• 光エネルギー変換を目的としたストラティファイド薄膜の作製
• ストラティファイド半導体微粒子光触媒の構造と触媒反応機構
• 溶液析出法によるCds薄膜光触媒の調製と反応活性
• 31a-YX-8 カーボンナノチューブのFEMとFIM
• High Field Magnetoabsorption of Hydrogenic Excitons at Second Direct Gap in InSe
• Layer-Nonlayer Structural Phase Transformation in IIIB-VI Compounds(Phase Transition・Charge Density Wave)
• Anisotropy of Lattice Dynamical Properties in ZrS_2 and HfS_2
• Phonon Structures in Optical Spectra of Layer Compounds GaSe and GaS
• Raman Scattering and Fundamental Absorption in Red-HgI_2 under Hydrostatic Pressure
• Exciton Selection Rules in the Polarized Resonant Raman Scattering by LO Phonons in InSe
• Supernonlinear Shifts of Optical Energy Gaps in InSe and GaSe under Hydrostatic Pressure
• Two-Photon Photoemission and Band Symmetry in ε-GaSe
• Optical Emission Spectra during Carbon Nanotube Production by Arc Discharge in H_2, CH_4 or He Gas
• High Upcomversion Intensity of Er^ in a LaF_3 Thin Film on CaF_2 (111)Grown by the Molecular Beam Epitaxy Method
• Epitaxial Growth of Er^ -Doped CaF_2 by Molecular Beam Epitaxy
• Observation of Dipole-Forbidden Transitions througy Fano Antiresonance in Boron-Doped Silicon
• Rectangular Arrangement of Se-Ring Clusters on Graphite Surface and Their Structural Transformation
• An Interpretation of the Correlation Between the Intensity of Scanning Tunneling Microscopy (STM) Induced Light Emission and the Topographic Height for the Metal Particles
• Raman Scattering and X-ray Diffraction Studies on Phase Transitions in ZnCl_2 under Hydrostatic Pressure
• Anharmonicity of Low Frequency Lattice Vibrations in Red-HgI_2
• 金属イオンドープ型ZnO光触媒の調製とそれを用いた光エネサギー変換
• A New Emission Spectrum of Au_2 in the Gas Evaporation Technique: 761-809 nm
• Field Emission Patterns from Single-Walled Carbon Nanotubes
• Magnetic Properties of Iron in Nanocapsules
• Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method
• Vacancy Formation Energy of Silicon Determined by a New Quenching Method : Semiconductors
• Vacancy Formation Energy at Metal-Silicon Interface Region
• Fast Boron Diffusion in Si Crystal under Electron Irradiation at Room Temperature Indicated by the Enhanced Formation of Boron-Hydrogen Pairs
• The Growth Mechanism of SiC Film on a Si (111)-(7×7) Surface by C_ Precursor Studied by Photoelectron Spectroscopy
• The Quality of SiC Film Formed by Thermal Reaction of C_ Monolayer on Si(111)-(7×7) Surface(STM-C_)
• B-4 ナノチューブの臨界張力の測定(分科B:「実験開発」)
• ZnO, ZnS 光触媒薄膜の調製とその触媒特性
• 水熱処理法を用いた多層ナノチューブの精製
• 新しいプロセスによるストラティファイド半導体微粒子の調製とその光触媒特性
• 25aF-12 水素ガス中アーク放電によるナノグラファイバーの成長と構造
• 半導体クラスターのサイズ制御法
• 31a-YX-7 二元金属触媒を用いたアーク放電法による単層ナノチューブの多量合成II
• 7a-PS-51 金2原子分子からの発光分析:760-800nm
• Luminescences of Pyrene Single Crystal and Pyrene Molecules Inserted in a Molecular Vessel of Cyclodextrin(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Coupling Between Electrons and Molecular Vibrations of an Anthracene Single Molecule in a Cyclodextrin(Atomic and Molecular Physics)
• Electronic States of SnBr_4 Single Crystal and of Its Clusters Inserted in the Molecular Vessel of Cyclodextrin
• Electronic States of SnBr_4 Single Crystal and of Its Clusters Inserted in the Molecular Vessel of Cyclodextrin
• New Reconstructions of Platinum Silicide Surface (Special Issue: Scanning Tunneling Microscopy/Spectroscopy and Related Techniques)
• Vibrational Modes of C_ Fullerene on Si(111)7×7 Surface : Estimation of Charge Transfer from Silicon Dangling Bonds to C_ Molecules
• Vibrational Modes of C_ Fullerene Adsorbed on Si(100)2×1 Surface Studied by High-Resolution Electron-Energy-Loss Spectroscopy
• Resonant Electronic Raman Scattering and Electronic Structures of Bound Exciton Complex in ZnSe
• Effect of Uniaxial Stress on the Photoluminescence from Plastically Deformed Silicon
• Radiative Recombination on Dislocations in Silicon Crystals
• Study of the Exciton State by Magneto-Raman Scattering in HgI_2
• Resonant Two-Photon Photoemission via Is Exciton Level in PbI_2
• Topographic Study on Staging Transition in H_2SO_4-Graphite Intercalation Compound by in situ Raman Scattering Measurements
• Topography Dependence of Tunneling-Induced Fluorescence from Porphyrin Film
• Photoconductivity and Luminescence of GaSe by Two-Photon Excitation
• Inelastic Electron Tunneling Spectra in Pb-GaS_xSe_-Pb Junctions
• Indirect Absorption Edge of GaS under Uniaxial Pressure
• The Second Indirect Edge in GaS
• Ferroelastic Multidomains in LaNbO_4 Crystals
• The Relationship between the Reaction Conditions and the Nature of the Zn-bearing Ferrite Produced at Ambient Temperature
• A method for characterizing carbon nanotubes
• The Structure and Crystallization of Amorphous Selenium Film
• The Crystallization of Vitreous Selenium
• Far-Infrared Investigation on Structure of Amorphous Selenium
• Origin of the Blue Shift in Ultraviolet Absorption Spectra of Nanocrystalline CeO_ Particles
• 昭和の物質科学と平成の物質科学(特別講演,第18回物理教育研究大会(仙台大会)の報告)
• 昭和の物質科学と平成の物質科学
• Raman Scattering of Inorganic Fibers
• Direct Silica-Coating of Quantum Dots
• Electroluminescence in GaSe_S_x Crystals
• Interrelationship between Bond Ionicity and Lattice Instability of III-VI Layer Compounds
• The Effect of Stacking Fault on the Photoluminescence Spectrum of Free Exciton in GaSe(Excitons and Phonons)
• Multiple-Phonon Scattering Mechanism in the Exciton Region of HgI_2(Excitons and Phonons)
• Infrared Absorption and Faraday Effect in PbTe and PbSe
• Polytypes and Excitons in GaSe_S_x Mixed Crystals
• Polytype Dependence of Intralayer Bond Length in GaSe_S_x Mixed Crystals(0.3≤x≤0.4)
• Resonant Brillouin Scattering of Exciton Polaritons in 2H-PbI_2
• Coupling Between Electrons and Molecular Vibrations of an Anthracene Single Molecule in a Cyclodextrin(Atomic and Molecular Physics)
• One- and Two-Phonon Absorptions in GaSe and GaS

もっと見る 閉じる

スポンサーリンク