Multiple-Phonon Scattering Mechanism in the Exciton Region of HgI_2(Excitons and Phonons)
スポンサーリンク
概要
- 論文の詳細を見る
Multiple-phonon structure has been observed in both the Raman spectrum in the exciton region and the excitation spectrum for the phonon-assisted free exciton emission of a layer semiconductor, red-HgI_2. The associated longitudinal phonon has symmetry E. Two dimensionality in its dispersion contributes to the large cross section for the multiple-phonon scattering. The multiple-phonon structure observed in the Raman spectrum suggests that the initial state for the resonant Raman scattering is given not only by the polariton state but also by the hot exciton state.
- 東北大学の論文
著者
-
NISHINA Yuichiro
The Research Institute for Iron,Steel and Other Metals,Tohoku University
-
Nishina Yuichiro
The Research Institute For Iron Steel And Other Metals
-
Goto Takenari
The Research Institute For Iron Steel And Other Metals Tohoku University
-
NISHINA Yuichiro
The Research Institute for Iron, Steel and Other Metals Tohoku University
関連論文
- 23aYF-5 集合状態における単層カーボンナノチューブの電子構造のSTM/STSによる解析
- 26a-M-7 ナノチューブの共鳴ラマン散乱
- 31p-YX-9 ナノチューブの共鳴ラマン散乱
- 光エネルギー変換を目的としたストラティファイド薄膜の作製
- ストラティファイド半導体微粒子光触媒の構造と触媒反応機構
- 溶液析出法によるCds薄膜光触媒の調製と反応活性
- 31a-YX-8 カーボンナノチューブのFEMとFIM
- High Field Magnetoabsorption of Hydrogenic Excitons at Second Direct Gap in InSe
- Layer-Nonlayer Structural Phase Transformation in IIIB-VI Compounds(Phase Transition・Charge Density Wave)
- Anisotropy of Lattice Dynamical Properties in ZrS_2 and HfS_2
- Phonon Structures in Optical Spectra of Layer Compounds GaSe and GaS
- Raman Scattering and Fundamental Absorption in Red-HgI_2 under Hydrostatic Pressure
- Exciton Selection Rules in the Polarized Resonant Raman Scattering by LO Phonons in InSe
- Supernonlinear Shifts of Optical Energy Gaps in InSe and GaSe under Hydrostatic Pressure
- Raman Scattering and X-ray Diffraction Studies on Phase Transitions in ZnCl_2 under Hydrostatic Pressure
- Anharmonicity of Low Frequency Lattice Vibrations in Red-HgI_2
- 金属イオンドープ型ZnO光触媒の調製とそれを用いた光エネサギー変換
- A New Emission Spectrum of Au_2 in the Gas Evaporation Technique: 761-809 nm
- Field Emission Patterns from Single-Walled Carbon Nanotubes
- B-4 ナノチューブの臨界張力の測定(分科B:「実験開発」)
- ZnO, ZnS 光触媒薄膜の調製とその触媒特性
- 水熱処理法を用いた多層ナノチューブの精製
- 新しいプロセスによるストラティファイド半導体微粒子の調製とその光触媒特性
- 25aF-12 水素ガス中アーク放電によるナノグラファイバーの成長と構造
- 半導体クラスターのサイズ制御法
- 31a-YX-7 二元金属触媒を用いたアーク放電法による単層ナノチューブの多量合成II
- 7a-PS-51 金2原子分子からの発光分析:760-800nm
- Resonant Electronic Raman Scattering and Electronic Structures of Bound Exciton Complex in ZnSe
- Effect of Uniaxial Stress on the Photoluminescence from Plastically Deformed Silicon
- Radiative Recombination on Dislocations in Silicon Crystals
- Resonant Two-Photon Photoemission via Is Exciton Level in PbI_2
- Topographic Study on Staging Transition in H_2SO_4-Graphite Intercalation Compound by in situ Raman Scattering Measurements
- Photoconductivity and Luminescence of GaSe by Two-Photon Excitation
- Inelastic Electron Tunneling Spectra in Pb-GaS_xSe_-Pb Junctions
- Indirect Absorption Edge of GaS under Uniaxial Pressure
- The Second Indirect Edge in GaS
- The Structure and Crystallization of Amorphous Selenium Film
- The Crystallization of Vitreous Selenium
- Far-Infrared Investigation on Structure of Amorphous Selenium
- 昭和の物質科学と平成の物質科学(特別講演,第18回物理教育研究大会(仙台大会)の報告)
- 昭和の物質科学と平成の物質科学
- Zeeman Effect of an Induced Absorption Line in Highly Excited CuCl
- Raman Scattering of Inorganic Fibers
- Electroluminescence in GaSe_S_x Crystals
- Interrelationship between Bond Ionicity and Lattice Instability of III-VI Layer Compounds
- The Effect of Stacking Fault on the Photoluminescence Spectrum of Free Exciton in GaSe(Excitons and Phonons)
- Multiple-Phonon Scattering Mechanism in the Exciton Region of HgI_2(Excitons and Phonons)
- Infrared Absorption and Faraday Effect in PbTe and PbSe
- Polytypes and Excitons in GaSe_S_x Mixed Crystals
- Polytype Dependence of Intralayer Bond Length in GaSe_S_x Mixed Crystals(0.3≤x≤0.4)
- One- and Two-Phonon Absorptions in GaSe and GaS