Resonant Two-Photon Photoemission via Is Exciton Level in PbI_2
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概要
- 論文の詳細を見る
The spectral response for the two-photon photoelectric effect has been measuredin a layer-type semiconductor, Pb[z, in the temperature range from 110 K to roomtemrxrature. A sharr>rise in the rhotoelectric >'ield is observed at the photonenergy corresponding to the Is exciton level determined from the optical absorp-tion spectrum. The increase in the photoelectric yield is explained in terms of theresonant two-photon process in which the Is exciton level contributes as theintermediate state. The backsround r:>hotoelectric vield in the lower r>hoton enerx>rrange is interpreted in terms of the interference between the bulk Is exciton leveland the continuous surface states.
- 社団法人日本物理学会の論文
- 1981-01-15
著者
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NISHINA Yuichiro
The Research Institute for Iron,Steel and Other Metals,Tohoku University
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Kasuya Atsuo
The Research Institute For Iron Steel And Other Metals Tohoku University
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Nishina Yuichiro
The Research Institute For Iron Steel And Other Metals
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