Vacancy Formation Energy of Silicon Determined by a New Quenching Method : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-08-15

著者

• Kasuya Atsuo

  Center for Interdisciplinary Research, Tohoku University

• Kasuya A

  Center For Interdisciplinary Research Tohoku University

• Kasuya Atsuo

  Institute Of Materials Resesrch Tohoku University

• Kasuya Atsuo

  Center For Interdisciplinary Research Tohoku University

• Fukata N

  Univ. Tsukuba Tsukuba Jpn

• Fukata Naoki

  Institute For Materials Research Tohoku University

• SUEZAWA Masashi

  Institute for Materials Research,Tohoku University

• Suezawa Masashi

  Institute For Materials Research Tohoku University

• Suezawa Masashi

  Institute For Materials Research Tokoku Universily

• Suezawa M

  Institute For Materials Research Tohoku University

• KASUYA Atsuo

  Center for Interdisciplinary Research and Graduate School of Engineering, Tohoku University

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