Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-07-15
著者
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Hosono H
Materials And Structures Laboratory Tokyo Institute Of Technology
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Fukata N
Univ. Tsukuba Tsukuba Jpn
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Fukata Naoki
Institute For Materials Research Tohoku University
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Murakami K
静岡大学電子工学研究所
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Sasaki S
Institute Of Materials Science University Of Tsukuba
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HANEDA Hajime
National Institute for Materials Science
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MURAKAMI Kouichi
Institute of Materials Science, University of Tsukuba, Tsukuba Academic City
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FUJIMURA Shuzo
Process Development Division, Fujitsu Ltd.
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Fujimura Shuzo
Precess Development Division C850 Fujitsu Limited
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Fujimura Shuzo
Process Development Division Fujitsu Ltd.
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Fujimura Shuzo
Process Development Div. C850 Fujitsu Ltd.
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Murakami Kouichi
Institute Of Materials Science University Of Tsukuba
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Murakami Kouichi
Institute Of Material Science University Of Tsukuba
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Murakami Kouichi
Institute Of Applied Physics University Of Tsukuba
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Sasaki Shinichi
Institute Of Materials Science University Of Tsukuba
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Sasaki S
Ntt System Electronics Lab. Kanagawa Jpn
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Haneda H
Sensor Materials Center National Inst. For Materials Sci.
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Haneda Hajime
National Institute For Material Science
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Murakami K
Research Institute Of Electronics Shizuoka University
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