Sputtering Phenomenon Induced by Laser-Ablated Particles

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概要

• 論文の詳細を見る

• We have investigated the dynamic behavior of laser-ablated Si particles by means of time-resolved X-ray absorption spectroscopy. Laser-ablated Si particles are found to induce sputtering of an Al plate which is located near the Si target. Moreover, it is suggested that Si cluster formation is enhanced by collisions between laserablated Si particles and Si particles backscattered by a Si wafer located near the Si target. We tentatively assign unidentified X-ray absorption peaks appearing near 120 eV to small Si clusters.

• 社団法人応用物理学会の論文
• 1996-06-15

著者

• Murakami K

  静岡大学電子工学研究所

• Yoda O

  Japan Atomic Energy Res. Inst. Kizu Jpn

• Yoda Osamu

  Takasaki Radiation Chemistry Research Establishment Japan Atomic Energy Research Institute

• MURAKAMI Kouichi

  Institute of Materials Science, University of Tsukuba, Tsukuba Academic City

• Murakami Kouichi

  Institute Of Materials Science University Of Tsukuba

• Murakami Kouichi

  Institute Of Material Science University Of Tsukuba

• Murakami Kouichi

  Institute Of Applied Physics University Of Tsukuba

• OHYANAGI Takasumi

  Institute of Materials Science, University of Tsukuba

• MIYASHITA Atsumi

  Takasaki Research Establishment, Japan Atomic Energy Research Institute

• Miyashita Atsumi

  Takasaki Research Establishment Japan Atomic Energy Research Institute

• Ohyanagi T

  Institute Of Materials Science University Of Tsukuba

• Ohyanagi Takasumi

  Institute Of Materials Science University Of Tsukuba

• Murakami K

  Research Institute Of Electronics Shizuoka University

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