Formation Mechanism of Interstitial Hydrogen Molecules in Crystalline Silicon

概要

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The formation mechanism of interstitial H2 in crystalline silicon was investigated by varying the dopant concentration and hydrogenation temperature. At low temperatures such as 125°C, the Raman peak of the interstitial H2 is observed only in heavily doped n-type silicon, suggesting that the formation of H2 includes a metastable donor-hydrogen complex as the precursor and that H2 formation out of two isolated hydrogen atoms is hindered by the Coulombic repulsion between two equally charged atoms at this temperature. At moderate temperatures such as 235°C, the interstitial H2 is formed also for intrinsic and p-type silicon. The absence of the dopant-concentration dependence in p-type silicon indicates that the H2 is created from two hydrogen atoms, at least one of which is neutralized by capturing a thermally excited electron. The formation of the interstitial H2 competes with that of extended planar defects (platelets) at high temperatures such as 305°C.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-09-15